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IRFB7537
+BOMInfineon
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ManufacturerInfineon Technologies
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Mfr. Part #IRFB7537
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Datasheet IRFB7537 DataSheet
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In Stock15608
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Specifications
| Attribute | Value |
Overview
Description
Key features of the IRFB7537 include a low on-state resistance (R_DS(on)), which minimizes power loss and enhances efficiency. It operates with a maximum drain-source voltage (V_DS) of 150V and a continuous drain current (I_D) of up to 75A, making it suitable for medium to high power applications. The device supports fast switching speeds due to its low gate charge, which helps reduce switching losses.
The IRFB7537 comes in a TO-220 package, providing a balance between ease of use in circuit design and effective thermal management. Its robust construction allows it to handle high power levels, making it an ideal choice for engineers seeking reliable performance in demanding electronic applications.
Equivalent
1. STP80NF70 from STMicroelectronics
2. FQA90N10 from ON Semiconductor
3. FDP047N10 from Fairchild Semiconductor (now part of ON Semiconductor)
4. IPB100N06S4L from Infineon Technologies
These alternatives should have similar voltage and current ratings but always verify specifications from the datasheets to ensure compatibility with your application.
Features
1. Voltage and Current Ratings: It typically offers a maximum drain-source voltage (Vds) of around 150V and a continuous drain current (Id) of about 75A under specific conditions, making it suitable for high-power applications.
2. Rds(on): The MOSFET has a low on-resistance (Rds(on)), which minimizes power loss and improves efficiency, particularly important in switching applications.
3. Fast Switching: The device supports fast switching speeds, which are beneficial for high-frequency applications.
4. Thermal Performance: It is designed to handle significant thermal stress, often featuring a TO-220 or TO-247 package that aids in heat dissipation.
5. Robust Construction: The IRFB7537 is built to withstand harsh operating conditions, contributing to its reliability in industrial and automotive applications.
6. Gate Charge: It offers a moderate gate charge, facilitating efficient drive and control in electronic circuits.
These characteristics make the IRFB7537 suitable for use in power supplies, motor drives, and other applications requiring efficient load switching.
Pinout
1. Gate (G): This pin is responsible for activating the MOSFET. Applying a voltage to the gate controls the flow of current between the drain and the source.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is on. It is connected to the load that the MOSFET is controlling.
3. Source (S): This pin serves as the return path for the current flowing through the MOSFET. It is typically connected to the ground or a reference voltage.
The IRFB7537 is designed for high-efficiency switching applications and is commonly used in power supplies, motor drives, and other electronic circuits requiring efficient power management.
Manufacturer
Application
1. Switching Power Supplies: Utilized in DC-DC converters and power inverters for efficient power management.
2. Motor Drives: Employed in controlling motors in industrial and consumer electronics.
3. Uninterruptible Power Supplies (UPS): Used for reliable power backup systems.
4. Automotive Applications: Integrated into systems for electric and hybrid vehicles, providing efficient power control.
5. Renewable Energy Systems: Significant in solar inverters and other renewable energy applications for energy conversion.
These applications leverage the MOSFET's low on-resistance and high-speed switching capabilities.