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IRFBG30
+BOMMOSFET N-CH 1000V 3.1A TO220AB
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ManufacturerVishay Siliconix
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Mfr. Part #IRFBG30
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In Stock20267
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Specifications
| Attribute | Value |
| Supplier | Vishay Siliconix |
| Package | Tube |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1000 V |
| Current-ContinuousDrain(Id)@25°C | 3.1A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 5Ohm @ 1.9A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 80 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 980 pF @ 25 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Overview
Description
IRFBG30 refers to a specific type of power MOSFET, a semiconductor device used for switching and amplifying electronic signals in power applications. The "IRF" denotes the manufacturer, International Rectifier, a well-known company in the semiconductor industry, which has since been acquired by Infineon Technologies. The "BG30" refers to the specific series or model number of the MOSFET.
These MOSFETs are typically used in various applications, such as power supplies, motor drives, lighting, and other industrial and consumer electronics, due to their efficiency and reliability. The IRFBG30, like other MOSFETs, features a high-speed switching capability, low on-state resistance, and a gate that controls the flow of current, making it suitable for high-frequency applications.
In summary, the IRFBG30 is a versatile and efficient component in the realm of electronic power management, serving crucial roles in both commercial and industrial electronic systems. Its design allows for effective energy control and conversion, contributing to the overall efficiency and performance of electronic circuits.
These MOSFETs are typically used in various applications, such as power supplies, motor drives, lighting, and other industrial and consumer electronics, due to their efficiency and reliability. The IRFBG30, like other MOSFETs, features a high-speed switching capability, low on-state resistance, and a gate that controls the flow of current, making it suitable for high-frequency applications.
In summary, the IRFBG30 is a versatile and efficient component in the realm of electronic power management, serving crucial roles in both commercial and industrial electronic systems. Its design allows for effective energy control and conversion, contributing to the overall efficiency and performance of electronic circuits.
Equivalent
The IRFBG30 is a MOSFET commonly used in power electronics. Equivalent products are those with similar voltage, current ratings, and package types. Possible equivalents are:
1. IRFB31N20D from Infineon Technologies
2. STP30NF10 from STMicroelectronics
3. FQA30N40 from ON Semiconductor
4. FDP038AN08A0 from ON Semiconductor
When selecting an equivalent, ensure compatibility with your circuit requirements, such as voltage, current, and thermal characteristics. Always consult datasheets for precise specifications.
1. IRFB31N20D from Infineon Technologies
2. STP30NF10 from STMicroelectronics
3. FQA30N40 from ON Semiconductor
4. FDP038AN08A0 from ON Semiconductor
When selecting an equivalent, ensure compatibility with your circuit requirements, such as voltage, current, and thermal characteristics. Always consult datasheets for precise specifications.
Features
The IRFBG30 is a N-channel MOSFET, popular for its robust performance in various applications. Key features include:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (Vds) of around 100V and a continuous drain current (Id) of up to 42A.
2. Low On-Resistance: The MOSFET features a low Rds(on), which minimizes power dissipation and improves efficiency in switching applications.
3. Fast Switching Speed: It is designed to offer rapid switching capabilities, making it suitable for high-frequency applications.
4. Thermal Characteristics: The IRFBG30 is built to manage heat efficiently, often with a low thermal resistance junction-to-case, allowing for effective heat dissipation.
5. Package Type: It is commonly available in TO-220 or similar packages, facilitating easy integration into circuits.
6. Applications: Ideal for use in power supply designs, motor controllers, and other applications requiring efficient power management.
These features make the IRFBG30 a versatile component in electronic design, balancing performance and efficiency.
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (Vds) of around 100V and a continuous drain current (Id) of up to 42A.
2. Low On-Resistance: The MOSFET features a low Rds(on), which minimizes power dissipation and improves efficiency in switching applications.
3. Fast Switching Speed: It is designed to offer rapid switching capabilities, making it suitable for high-frequency applications.
4. Thermal Characteristics: The IRFBG30 is built to manage heat efficiently, often with a low thermal resistance junction-to-case, allowing for effective heat dissipation.
5. Package Type: It is commonly available in TO-220 or similar packages, facilitating easy integration into circuits.
6. Applications: Ideal for use in power supply designs, motor controllers, and other applications requiring efficient power management.
These features make the IRFBG30 a versatile component in electronic design, balancing performance and efficiency.
Pinout
The IRFBG30 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its high-current and high-voltage capabilities. This particular MOSFET typically comes in a TO-220 package, which has three pins. Here’s a concise overview of its pin count and functions:
1. Pin 1 - Gate (G): This pin is where the voltage is applied to control the MOSFET’s operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Pin 2 - Drain (D): This is the output pin through which the current flows from the drain to the source when the MOSFET is switched on.
3. Pin 3 - Source (S): This is the terminal through which the current exits the MOSFET. It is connected to the ground or the negative side of the load.
The IRFBG30 is typically used in applications requiring efficient power switching, such as power supplies, motor controls, and other high-power applications.
1. Pin 1 - Gate (G): This pin is where the voltage is applied to control the MOSFET’s operation. A voltage applied to the gate allows current to flow between the drain and source.
2. Pin 2 - Drain (D): This is the output pin through which the current flows from the drain to the source when the MOSFET is switched on.
3. Pin 3 - Source (S): This is the terminal through which the current exits the MOSFET. It is connected to the ground or the negative side of the load.
The IRFBG30 is typically used in applications requiring efficient power switching, such as power supplies, motor controls, and other high-power applications.
Manufacturer
The IRFBG30 is a power MOSFET manufactured by Infineon Technologies. Infineon is a leading semiconductor company that specializes in designing and producing a wide range of semiconductor solutions for various industries. The company is headquartered in Neubiberg, Germany, and is known for its innovations in power electronics, automotive solutions, security technologies, and Internet of Things (IoT) applications. Infineon's products are integral in enhancing energy efficiency, enabling smart mobility, and ensuring security in electronic devices and systems.
Application
The IRFBG30 is a type of power MOSFET designed for high-speed switch applications. It is commonly used in areas such as:
1. Power Supply Systems: Employed in switch-mode power supplies (SMPS) for efficient energy conversion.
2. Motor Control: Used in motor drives and controllers for precise speed and torque control.
3. DC-DC Converters: Essential in converting DC voltages for applications like renewable energy systems.
4. Lighting: Utilized in electronic ballast for fluorescent and LED lighting systems.
5. Automotive: Applied in electric vehicle systems, including inverters and battery management systems.
6. Inverters: Used in power inverters for renewable energy systems and uninterruptible power supplies (UPS).
1. Power Supply Systems: Employed in switch-mode power supplies (SMPS) for efficient energy conversion.
2. Motor Control: Used in motor drives and controllers for precise speed and torque control.
3. DC-DC Converters: Essential in converting DC voltages for applications like renewable energy systems.
4. Lighting: Utilized in electronic ballast for fluorescent and LED lighting systems.
5. Automotive: Applied in electric vehicle systems, including inverters and battery management systems.
6. Inverters: Used in power inverters for renewable energy systems and uninterruptible power supplies (UPS).
Package
IRFBG30 is typically available in a TO-220 package. This package type is commonly used for power semiconductors and is designed to provide efficient heat dissipation and reliable performance in high-power applications.
