IRFH5406TRPBF

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IRFH5406TRPBF

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MOSFET N-CH 60V 11A/40A 8PQFN

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Specifications

Attribute Value
Series HEXFET®
PartStatus Obsolete
BaseProductNumber IRFH5406
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 11A (Ta), 40A (Tc)
DriveVoltage(MaxRdsOn,MinRdsOn) 10V
RdsOn(Max)@Id,Vgs 14.4mOhm @ 24A, 10V
Vgs(th)(Max)@Id 4V @ 50µA
GateCharge(Qg)(Max)@Vgs 35 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1256 pF @ 25 V
PowerDissipation(Max) 3.6W (Ta), 46W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-PQFN (5x6)
Package 8-PowerVDFN
Packaging Cut Tape (CT), Tape & Reel (TR)

Overview

Description

The IRFH5406TRPBF is a N-channel HEXFET Power MOSFET from Infineon Technologies, designed for high-efficiency power switching applications. Key features include:
- Voltage Rating: 60V
- Current Rating: 140A (pulsed) / 100A (continuous)
- Low On-Resistance (RDS(on)): 2.2mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-frequency operation
- Package: PQFN 5x6mm, suitable for compact designs
Ideal for DC-DC converters, motor drives, and power management in automotive, industrial, and computing systems. Its low conduction losses and robust thermal performance enhance efficiency in high-current applications.

Equivalent

Equivalent products to the IRFH5406TRPBF (N-channel MOSFET, 40V, 60A) include:
- IRF1404PBF (40V, 162A)
- IRF1405PBF (55V, 169A)
- IRF3205PBF (55V, 110A)
- IRL40B209 (40V, 62A)
- AON6220 (40V, 60A)
Check datasheets for exact specs and pin compatibility.

Features

The IRFH5406TRPBF is a N-channel MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 130A (continuous), 520A (pulsed)
- Low On-Resistance (RDS(on)): 1.6mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: PQFN 5x6mm (PowerPak® SO-8 compatible)
- Gate Charge (Qg): 120nC (typical)
- Avalanche Rated: Robust for rugged applications
- Low Gate Drive (VGS): 4.5V (fully enhanced at 10V)
Ideal for DC-DC converters, motor drives, and power management in automotive, industrial, and computing systems.

Pinout

The IRFH5406TRPBF is a Power MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- N-channel MOSFET
- VDS: 60V
- ID: 140A (pulsed) / 100A (continuous)
- Low RDS(on): 2.2mΩ (max at VGS=10V)
- Logic-level gate drive (VGS ≥ 4.5V)
Applications:
- High-current switching (motor control, power supplies, DC-DC converters).

Application

The IRFH5406TRPBF is a power MOSFET commonly used in:
1. Switching Power Supplies – Efficient DC-DC converters and voltage regulators.
2. Motor Control – Drives in automotive, industrial, and robotics applications.
3. LED Lighting – High-efficiency drivers for solid-state lighting.
4. Battery Management – Protection circuits and power distribution in portable devices.
5. Solar Inverters – Energy conversion in renewable power systems.
Its low on-resistance (RDS(on)) and high current handling (up to 100A) make it ideal for high-power, high-efficiency applications.

Package

The IRFH5406TRPBF is a Power MOSFET packaged in a PQFN 5x6mm (Power Quad Flat No-Lead) format. This surface-mount package offers efficient thermal performance and compact size, suitable for high-power applications. Key features include a low-profile design and exposed thermal pads for enhanced heat dissipation.

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