IRFL014NTRPBF

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IRFL014NTRPBF

+BOM

MOSFET N-CH 55V 1.9A SOT223

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Specifications

Attribute Value
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain(Id) @ 25°C 1.9A (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 160mOhm @ 1.9A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 11 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 190 pF @ 25 V
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223

Overview

Description

The IRFL014NTRPBF is a N-channel HEXFET Power MOSFET from Infineon Technologies, designed for high-efficiency power switching applications. Key features include:
- Low On-Resistance (RDS(on)): Enhances efficiency by minimizing conduction losses.
- Fast Switching: Suitable for high-frequency applications like DC-DC converters and motor drives.
- Compact Package (SOT-23): Ideal for space-constrained designs.
- Low Gate Charge (Qg): Reduces drive power requirements.
Typical Applications:
- Load switching in portable devices.
- Power management in battery-powered systems.
- LED drivers and small motor control.
Voltage/Current Ratings:
- Drain-Source Voltage (VDS): 20V
- Continuous Drain Current (ID): 1.7A
This MOSFET is Pb-free (RoHS compliant) and offers reliable performance for low-voltage, low-power applications.

Equivalent

Equivalent products to the IRFL014NTRPBF (N-channel MOSFET, 60V, 0.14Ω, SOT-23) include:
- IRLML6402TRPBF (P-channel, similar specs)
- SI2302DS-T1-GE3 (N-channel, 20V, 0.045Ω)
- DMN1019USN-13 (N-channel, 60V, 0.15Ω)
- BSS138 (N-channel, 50V, higher Rds(on))
Check datasheets for exact compatibility.

Features

The IRFL014NTRPBF is a N-channel HEXFET Power MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 10A (continuous)
- Low On-Resistance (RDS(on)): 50mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-efficiency power applications
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Low Gate Charge (Qg): Improves switching performance
- Avalanche Energy Rated: Enhances ruggedness
- Package: SOT-223 (compact, surface-mount)
- Applications: DC-DC converters, motor control, power management
This MOSFET is designed for high efficiency and reliability in low-voltage, high-current applications.

Pinout

The IRFL014NTRPBF is a N-channel HEXFET Power MOSFET in a SOT-223 package with 4 pins (though one is unused).
Pin Functions:
1. Gate (G) – Controls the MOSFET switching.
2. Drain (D) – Connected to the load (high current path).
3. Source (S) – Ground/reference terminal.
4. Unconnected (NC) – Electrically isolated (no function).
Key Features:
- 30V Drain-Source Voltage (VDS)
- 1.4mΩ On-Resistance (RDS(on))
- High current handling (up to 100A pulsed)
Commonly used in power switching, motor control, and DC-DC converters.

Application

The IRFL014NTRPBF is an N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – Small motor drivers in appliances and robotics.
3. Load Switching – Power distribution in portable devices.
4. LED Lighting – Driver circuits for efficient LED control.
5. Battery Protection – Overcurrent/overvoltage protection in power systems.
Its low on-resistance and compact package make it suitable for space-constrained, energy-efficient applications.

Package

The IRFL014NTRPBF is a N-channel HEXFET Power MOSFET in a SOT-23 surface-mount package. It is compact, suitable for low-power applications, and features three leads. The SOT-23 package is commonly used for small-signal transistors and MOSFETs in space-constrained designs.

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