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IRFL210TRPBF
+BOMMOSFET N-CH 200V 960MA SOT223
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ManufacturerVishay Siliconix
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Mfr. Part #IRFL210TRPBF
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Datasheet IRFL210TRPBF DataSheet
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Package TO-261-4
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In Stock5559
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Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 960mA (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.5Ohm @ 580mA, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 8.2 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 140 pF @ 25 V |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
Overview
Description
The IRFL210TRPBF is a specific model of a HEXFET Power MOSFET, designed by Infineon Technologies. This component is commonly used in electronic circuits for switching and amplification purposes. Key features of the IRFL210TRPBF include low on-state resistance, fast switching capabilities, and high efficiency, making it suitable for a variety of applications such as power management, DC-DC converters, and motor drives.
The device comes in a standard TO-220 package, which is compact and easy to integrate into various designs. It is designed to handle significant power loads while maintaining performance stability across different operating conditions. The IRFL210TRPBF is also known for its robustness and reliability, typically featuring built-in protection mechanisms against over-voltage, over-temperature, and short circuits.
When incorporating the IRFL210TRPBF into a design, engineers benefit from its efficient energy usage and versatility, contributing to lower overall system costs and enhanced performance in power electronics applications.
The device comes in a standard TO-220 package, which is compact and easy to integrate into various designs. It is designed to handle significant power loads while maintaining performance stability across different operating conditions. The IRFL210TRPBF is also known for its robustness and reliability, typically featuring built-in protection mechanisms against over-voltage, over-temperature, and short circuits.
When incorporating the IRFL210TRPBF into a design, engineers benefit from its efficient energy usage and versatility, contributing to lower overall system costs and enhanced performance in power electronics applications.
Equivalent
The IRFL210TRPBF is a N-channel MOSFET. Equivalent products include:
1. NXP BSS138
2. Vishay/Siliconix 2N7002
3. ON Semiconductor 2N7000
4. Fairchild Semiconductor FDN337N
These equivalents may have different specifications such as voltage, current, and packaging, so it's crucial to compare the specific parameters to ensure compatibility with your application. Always check the datasheet for detailed specifications.
1. NXP BSS138
2. Vishay/Siliconix 2N7002
3. ON Semiconductor 2N7000
4. Fairchild Semiconductor FDN337N
These equivalents may have different specifications such as voltage, current, and packaging, so it's crucial to compare the specific parameters to ensure compatibility with your application. Always check the datasheet for detailed specifications.
Features
The IRFL210TRPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with notable features suited for various electronic applications. It is designed for low-voltage, high-speed switching applications. Key features include:
1. Voltage and Current Ratings: It can handle a drain-source voltage (V_DS) of up to 100V and a continuous drain current (I_D) of 1.6A.
2. Low On-Resistance: The MOSFET offers low on-state resistance (R_DS(on)), which minimizes power losses and enhances efficiency during operation.
3. Fast Switching: It is capable of rapid switching speeds, making it ideal for high-frequency circuits.
4. Package Type: The device is available in a surface-mount SO-8 package, which is compact and suitable for space-constrained applications.
5. Thermal Performance: It features efficient thermal characteristics, allowing for better heat dissipation.
6. Lead-Free: The IRFL210TRPBF is RoHS compliant, making it an environmentally friendly choice with lead-free construction.
These attributes make the IRFL210TRPBF suitable for use in power management, motor control, and other electronic applications requiring efficient switching performance.
1. Voltage and Current Ratings: It can handle a drain-source voltage (V_DS) of up to 100V and a continuous drain current (I_D) of 1.6A.
2. Low On-Resistance: The MOSFET offers low on-state resistance (R_DS(on)), which minimizes power losses and enhances efficiency during operation.
3. Fast Switching: It is capable of rapid switching speeds, making it ideal for high-frequency circuits.
4. Package Type: The device is available in a surface-mount SO-8 package, which is compact and suitable for space-constrained applications.
5. Thermal Performance: It features efficient thermal characteristics, allowing for better heat dissipation.
6. Lead-Free: The IRFL210TRPBF is RoHS compliant, making it an environmentally friendly choice with lead-free construction.
These attributes make the IRFL210TRPBF suitable for use in power management, motor control, and other electronic applications requiring efficient switching performance.
Pinout
The IRFL210TRPBF is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It comes in a 4-pin package, specifically a TO-252 (also known as DPAK) package. The pins are generally configured as follows:
1. Gate (G): This pin is used to control the MOSFET. When a voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current enters the MOSFET from the external circuit.
3. Source (S): This is the terminal through which the current exits the MOSFET to the external circuit.
4. Tab (Connected to Drain): In many cases, the metal tab is internally connected to the drain.
The IRFL210TRPBF is used in applications where fast switching and high efficiency are required, like in power management and conversion systems.
1. Gate (G): This pin is used to control the MOSFET. When a voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current enters the MOSFET from the external circuit.
3. Source (S): This is the terminal through which the current exits the MOSFET to the external circuit.
4. Tab (Connected to Drain): In many cases, the metal tab is internally connected to the drain.
The IRFL210TRPBF is used in applications where fast switching and high efficiency are required, like in power management and conversion systems.
Manufacturer
The IRFL210TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that is a leading provider of semiconductor solutions. It primarily focuses on automotive, industrial power control, power management and sensor systems, and connected secure systems. Infineon's products are integral to various applications, including automotive electronics, industrial systems, communications, and security solutions. The company is known for its innovation in power semiconductors, microcontrollers, sensors, and security devices.
Application
The IRFL210TRPBF is a power MOSFET known for its efficiency and reliability. It is commonly used in a variety of applications, including power management systems, DC-DC converters, and motor control circuits. Due to its low on-resistance and high-speed switching capabilities, it is also suitable for battery-powered devices and portable electronics. Additionally, the MOSFET is used in automotive applications for controlling small motors and actuators, as well as in industrial applications for driving solenoids and relays. Its robust design makes it ideal for high-frequency applications and designs requiring efficient thermal management.
Package
The IRFL210TRPBF is a MOSFET packaged in a SOT-223 type. This surface-mount package is commonly used for small to medium power applications.
