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IRFR110TRPBF
+BOMMOSFET N-CH 100V 4.3A DPAK
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ManufacturerVishay Siliconix
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Mfr. Part #IRFR110TRPBF
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Datasheet IRFR110TRPBF DataSheet
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In Stock9301
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Specifications
| Attribute | Value |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 2.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | IRFR110 |
Overview
Description
IRFR110TRPBF is a part of the IRF family of power MOSFETs, designed for use in various applications such as switching power supplies, motor control, and automotive systems. This specific model features a low on-resistance and fast switching capabilities, making it efficient for high-frequency operations. The "TR" in the part number indicates it is available in tape and reel packaging, suitable for automated assembly processes.
The IRFR110TRPBF is typically used in applications requiring high efficiency and reliability. It operates under various conditions, with an emphasis on thermal performance and robustness. The device is built on advanced technology to minimize power loss and heat generation, ensuring optimal performance in demanding environments.
Key specifications often include voltage ratings, current capacity, and thermal characteristics, all of which are crucial for designers aiming to optimize their circuits. Overall, the IRFR110TRPBF is a versatile component for efficient power management in modern electronic applications.
The IRFR110TRPBF is typically used in applications requiring high efficiency and reliability. It operates under various conditions, with an emphasis on thermal performance and robustness. The device is built on advanced technology to minimize power loss and heat generation, ensuring optimal performance in demanding environments.
Key specifications often include voltage ratings, current capacity, and thermal characteristics, all of which are crucial for designers aiming to optimize their circuits. Overall, the IRFR110TRPBF is a versatile component for efficient power management in modern electronic applications.
Equivalent
The IRFR110TRPBF is an N-channel MOSFET. Equivalent products include:
1. STP16NF06 - STMicroelectronics
2. IRF320 - International Rectifier
3. BSS138 - NXP Semiconductors (for lower voltage applications)
4. FQP30N06L - Fairchild Semiconductor
Always check the specific voltage, current ratings, and threshold characteristics to ensure compatibility in your application.
1. STP16NF06 - STMicroelectronics
2. IRF320 - International Rectifier
3. BSS138 - NXP Semiconductors (for lower voltage applications)
4. FQP30N06L - Fairchild Semiconductor
Always check the specific voltage, current ratings, and threshold characteristics to ensure compatibility in your application.
Features
The IRFR110TRPBF is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-to-source voltage (Vds) of 100V, making it suitable for various power applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 50A, which allows for robust performance in high-load scenarios.
3. Rds(on): The MOSFET exhibits a low on-resistance (Rds(on)) of approximately 0.045 ohms, reducing power losses and improving efficiency.
4. Gate Threshold Voltage: It has a low gate threshold voltage (Vgs(th)) ranging from 2V to 4V, allowing for easy driving with lower voltage levels.
5. Package Type: Packaged in a TO-220 format, it provides effective thermal performance and is easy to mount on PCBs.
These features make the IRFR110TRPBF an excellent choice for applications like motor control, power supplies, and DC-DC converters.
1. Voltage Rating: It has a maximum drain-to-source voltage (Vds) of 100V, making it suitable for various power applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 50A, which allows for robust performance in high-load scenarios.
3. Rds(on): The MOSFET exhibits a low on-resistance (Rds(on)) of approximately 0.045 ohms, reducing power losses and improving efficiency.
4. Gate Threshold Voltage: It has a low gate threshold voltage (Vgs(th)) ranging from 2V to 4V, allowing for easy driving with lower voltage levels.
5. Package Type: Packaged in a TO-220 format, it provides effective thermal performance and is easy to mount on PCBs.
These features make the IRFR110TRPBF an excellent choice for applications like motor control, power supplies, and DC-DC converters.
Pinout
The IRFR110TRPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin controls the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is where the current enters the MOSFET from the load. It is typically connected to the more positive voltage in a common-source configuration.
3. Source (S) - This pin is where the current exits the MOSFET. It is usually connected to ground or a lower voltage compared to the drain.
The IRFR110TRPBF is designed for various switching applications and can handle high current and voltage, making it suitable for power electronics.
1. Gate (G) - This pin controls the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is where the current enters the MOSFET from the load. It is typically connected to the more positive voltage in a common-source configuration.
3. Source (S) - This pin is where the current exits the MOSFET. It is usually connected to ground or a lower voltage compared to the drain.
The IRFR110TRPBF is designed for various switching applications and can handle high current and voltage, making it suitable for power electronics.
Manufacturer
The IRFR110TRPBF is manufactured by Infineon Technologies, a global leader in semiconductor solutions. Infineon is known for its focus on power semiconductor products, automotive solutions, and digital security technologies. The company designs and produces a wide range of components, including MOSFETs, IGBTs, and diodes, which are essential for applications in industrial electronics, automotive systems, and consumer electronics.
Founded in 1999 and headquartered in Neubiberg, Germany, Infineon operates in various sectors, including automotive, industrial power control, and chip card & security. The company's products are integral to enhancing energy efficiency and supporting the transition to renewable energy sources. Overall, Infineon is recognized for its commitment to innovation and sustainability in the semiconductor industry.
Founded in 1999 and headquartered in Neubiberg, Germany, Infineon operates in various sectors, including automotive, industrial power control, and chip card & security. The company's products are integral to enhancing energy efficiency and supporting the transition to renewable energy sources. Overall, Infineon is recognized for its commitment to innovation and sustainability in the semiconductor industry.
Application
The IRFR110TRPBF is an N-channel MOSFET primarily used in applications such as power management, DC-DC converters, and motor control. It is suitable for switching applications due to its low on-resistance and high-speed switching capabilities. Common areas include power supply circuits, LED drivers, automotive systems, and industrial equipment. Its robust performance makes it ideal for linear regulators and battery management systems as well. Overall, it serves in various applications where efficient power handling and thermal performance are essential.
Package
The IRFR110TRPBF is packaged in a TO-220 form factor, which is a standard package type for power MOSFETs. This package provides excellent thermal performance and allows for efficient heat dissipation.
