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IRFR3710ZPBF
+BOMMOSFET N-CH 100V 42A DPAK
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ManufacturerInfineon Technologies
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Mfr. Part #IRFR3710ZPBF
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Datasheet IRFR3710ZPBF DataSheet
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Package TO-252-3
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In Stock7685
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Specifications
| Attribute | Value |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 42A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 18mOhm @ 33A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 100 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2930 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
Overview
Description
- Voltage Rating: 100V
- Current Rating: 5.7A (continuous)
- Low On-Resistance (RDS(on)): 85mΩ (max) @ 10V
- Fast Switching Speed
- Logic-Level Gate Drive (4V threshold)
- TO-252 (DPAK) Package
Ideal for DC-DC converters, motor control, and load switching in automotive, industrial, and consumer electronics. Its low gate charge and robust thermal performance enhance efficiency in compact designs.
For detailed specs, refer to the datasheet.
Equivalent
- IRFR3720ZPBF (similar specs, higher current rating)
- IRFR3710Z (same specs, different packaging)
- IRFR1205ZPBF (lower voltage, similar current)
- STP80NF10 (100V, 80A, 0.015Ω)
- FQP10N20C (200V, 10A, 0.28Ω)
Check datasheets for exact compatibility.
Features
- Voltage Rating: 100V
- Current Rating: 42A (continuous)
- Low On-Resistance (RDS(on)): 23mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-speed applications
- Logic-Level Gate Drive: VGS(th) as low as 2V (min)
- Power Dissipation: 94W
- Package: TO-252 (DPAK), surface-mount
- Avalanche Energy Rated: Robust against inductive spikes
- Applications: Power supplies, motor control, DC-DC converters
This MOSFET is designed for efficiency in high-current, low-voltage applications.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Main current-carrying terminal (connected to the load).
3. Source (S) – Ground/reference terminal.
Key Features:
- N-channel MOSFET
- VDS: 100V
- ID: 5.7A (continuous)
- RDS(on): 0.23Ω (max at VGS = 10V)
- Logic-level gate drive (fully enhanced at 4.5V)
Commonly used in switching circuits, power supplies, and motor control.
