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IRG4PH50SPBF
+BOMIGBT 1200V 57A 200W TO247AC
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ManufacturerInfineon Technologies
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Mfr. Part #IRG4PH50SPBF
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Datasheet IRG4PH50SPBF DataSheet
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Package TO-247AC
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In Stock1810
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Specifications
| Attribute | Value |
| Package | Tube |
| ProductStatus | Obsolete |
| Voltage-CollectorEmitterBreakdown(Max) | 1200 V |
| Current-Collector(Ic)(Max) | 57 A |
| Current-CollectorPulsed(Icm) | 114 A |
| Vce(on)(Max)@VgeIc | 1.7V @ 15V, 33A |
| Power-Max | 200 W |
| SwitchingEnergy | 1.8mJ (on), 19.6mJ (off) |
| InputType | Standard |
| GateCharge | 167 nC |
| Td(on/off)@25°C | 32ns/845ns |
| TestCondition | 960V, 33A, 5Ohm, 15V |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
Overview
Description
The IRG4PH50SPBF is a specific model of Insulated Gate Bipolar Transistor (IGBT) designed for various electronic applications requiring efficient power switching. IGBTs like the IRG4PH50SPBF are hybrid devices combining the high-efficiency switching of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with the high-current and low-saturation-voltage capabilities of a bipolar transistor. This particular model is part of a range known for high-speed switching and low conduction losses, making it suitable for applications in inverters, motor drives, and other power conversion systems.
Key features of the IRG4PH50SPBF include its ability to handle high voltage and current, robust thermal management capabilities, and high reliability under demanding conditions. Additionally, it often includes built-in protections against overcurrent and overheating. The package design typically allows for easy integration into existing electronic circuits while maintaining high performance. Overall, the IRG4PH50SPBF is valued in industrial and consumer electronics for its efficiency, reliability, and capacity to manage significant power loads.
Key features of the IRG4PH50SPBF include its ability to handle high voltage and current, robust thermal management capabilities, and high reliability under demanding conditions. Additionally, it often includes built-in protections against overcurrent and overheating. The package design typically allows for easy integration into existing electronic circuits while maintaining high performance. Overall, the IRG4PH50SPBF is valued in industrial and consumer electronics for its efficiency, reliability, and capacity to manage significant power loads.
Equivalent
The IRG4PH50SPBF is a 1200V, 47A IGBT (Insulated Gate Bipolar Transistor) used in various power applications. Equivalent products include:
1. STMicroelectronics STGW30NC120HD
2. Infineon Technologies IKW50N120H3
3. ON Semiconductor FGL40N120AND
4. Mitsubishi Electric CM50DY-24H
When selecting replacements, ensure the electrical and thermal characteristics match your application needs. Always verify compatibility with the circuit design and thermal management requirements.
1. STMicroelectronics STGW30NC120HD
2. Infineon Technologies IKW50N120H3
3. ON Semiconductor FGL40N120AND
4. Mitsubishi Electric CM50DY-24H
When selecting replacements, ensure the electrical and thermal characteristics match your application needs. Always verify compatibility with the circuit design and thermal management requirements.
Features
The IRG4PH50SPBF is a high-voltage, high-speed insulated gate bipolar transistor (IGBT) designed for various power electronic applications. Key features include:
1. Voltage Rating: It has a collector-emitter voltage (VCES) rating of 1200V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous collector current (IC) of up to 39A at 100°C, allowing it to handle significant power loads.
3. Low Saturation Voltage: Featuring a low collector-emitter saturation voltage (VCE(sat)), which helps reduce conduction losses and improve efficiency.
4. Switching Speed: Designed for fast switching, it benefits applications requiring high-frequency operation.
5. Robust Design: Includes a high-temperature operating range, enhancing reliability in demanding environments.
6. Package Type: Typically available in a TO-247AC package, providing good thermal performance and ease of mounting.
7. Applications: Commonly used in motor drives, power inverters, and other high-power applications due to its high efficiency and robust performance.
These features make the IRG4PH50SPBF a versatile component for modern power electronics.
1. Voltage Rating: It has a collector-emitter voltage (VCES) rating of 1200V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous collector current (IC) of up to 39A at 100°C, allowing it to handle significant power loads.
3. Low Saturation Voltage: Featuring a low collector-emitter saturation voltage (VCE(sat)), which helps reduce conduction losses and improve efficiency.
4. Switching Speed: Designed for fast switching, it benefits applications requiring high-frequency operation.
5. Robust Design: Includes a high-temperature operating range, enhancing reliability in demanding environments.
6. Package Type: Typically available in a TO-247AC package, providing good thermal performance and ease of mounting.
7. Applications: Commonly used in motor drives, power inverters, and other high-power applications due to its high efficiency and robust performance.
These features make the IRG4PH50SPBF a versatile component for modern power electronics.
Pinout
The IRG4PH50SPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It typically comes in a TO-247 package with three pins. The pin configuration and function are as follows:
1. Collector (Pin 1): This is the terminal through which the main current enters the transistor when it is in the "on" state.
2. Gate (Pin 2): This is the control terminal used to trigger the IGBT. A voltage applied to the gate controls the flow of current between the collector and emitter.
3. Emitter (Pin 3): This is the terminal through which the main current exits the transistor when it is in the "on" state.
The IRG4PH50SPBF is designed for high-speed switching applications and is often used in power electronics, inverters, and motor control systems.
1. Collector (Pin 1): This is the terminal through which the main current enters the transistor when it is in the "on" state.
2. Gate (Pin 2): This is the control terminal used to trigger the IGBT. A voltage applied to the gate controls the flow of current between the collector and emitter.
3. Emitter (Pin 3): This is the terminal through which the main current exits the transistor when it is in the "on" state.
The IRG4PH50SPBF is designed for high-speed switching applications and is often used in power electronics, inverters, and motor control systems.
Manufacturer
The IRG4PH50SPBF is manufactured by Infineon Technologies. Infineon Technologies is a leading semiconductor company based in Germany. It specializes in designing, developing, and manufacturing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and other electronic components. These products are widely used in various applications across industries such as automotive, industrial, communication, and consumer electronics. Infineon is known for its innovation and focus on energy efficiency, security, and mobility solutions.
Application
The IRG4PH50SPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency and high-power applications. Its key application areas include:
1. Motor Drives: Used in industrial motor control systems for efficient power management.
2. Inverters: Suitable for solar inverters and uninterruptible power supplies (UPS) due to its high switching speed.
3. Welding Equipment: Provides reliable performance in industrial welding machines.
4. Power Supplies: Employed in switch-mode power supplies (SMPS) for improved energy efficiency.
5. HVAC Systems: Utilized in heating, ventilation, and air conditioning systems for better energy control.
These applications benefit from the IGBT's fast switching, low conduction losses, and high current capability.
1. Motor Drives: Used in industrial motor control systems for efficient power management.
2. Inverters: Suitable for solar inverters and uninterruptible power supplies (UPS) due to its high switching speed.
3. Welding Equipment: Provides reliable performance in industrial welding machines.
4. Power Supplies: Employed in switch-mode power supplies (SMPS) for improved energy efficiency.
5. HVAC Systems: Utilized in heating, ventilation, and air conditioning systems for better energy control.
These applications benefit from the IGBT's fast switching, low conduction losses, and high current capability.
Package
The IRG4PH50SPBF is an insulated gate bipolar transistor (IGBT) typically offered in a TO-247 package. The TO-247 package is a through-hole design, commonly used for power semiconductor devices, providing efficient thermal performance and robust electrical connections for high-power applications.
