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IRGP35B60PDPBF
+BOMIGBT 600V 60A 308W TO247AC
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ManufacturerInfineon Technologies
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Mfr. Part #IRGP35B60PDPBF
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Datasheet IRGP35B60PDPBF DataSheet
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Package TO-247-3
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In Stock3801
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Specifications
| Attribute | Value |
| Supplier | Infineon Technologies |
| Package | Tube |
| ProductStatus | Obsolete |
| IGBTType | NPT |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 60 A |
| Current-CollectorPulsed(Icm) | 120 A |
| Vce(on)(Max)@VgeIc | 2.55V @ 15V, 35A |
| Power-Max | 308 W |
| SwitchingEnergy | 220µJ (on), 215µJ (off) |
| InputType | Standard |
| GateCharge | 160 nC |
| Td(on/off)@25°C | 26ns/110ns |
| TestCondition | 390V, 22A, 3.3Ohm, 15V |
| ReverseRecoveryTime(trr) | 42 ns |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
Overview
Description
The IRGP35B60PDPBF is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for use in electronic systems where efficient power switching is required. Manufactured by Infineon Technologies, the IRGP35B60PDPBF is built to handle high voltages and currents, making it suitable for applications such as motor drives, industrial inverters, and power management systems.
Key features of this IGBT include a voltage rating of 600V and a current rating of 35A, providing robust performance in demanding environments. It offers low switching losses and high-speed switching capability, enhancing overall system efficiency. The device also incorporates a fast-recovery diode, which reduces power dissipation and improves thermal performance.
The IRGP35B60PDPBF is available in a TO-247 package, facilitating easy integration into various circuit designs. Its rugged construction and reliable performance make it a favored choice among engineers looking for durable, efficient solutions in power electronics applications.
Key features of this IGBT include a voltage rating of 600V and a current rating of 35A, providing robust performance in demanding environments. It offers low switching losses and high-speed switching capability, enhancing overall system efficiency. The device also incorporates a fast-recovery diode, which reduces power dissipation and improves thermal performance.
The IRGP35B60PDPBF is available in a TO-247 package, facilitating easy integration into various circuit designs. Its rugged construction and reliable performance make it a favored choice among engineers looking for durable, efficient solutions in power electronics applications.
Equivalent
The IRGP35B60PDPBF is an IGBT (Insulated Gate Bipolar Transistor) with a 600V voltage rating and 35A current capacity. Equivalent products include:
1. Fairchild FGA35N60 (now ON Semiconductor)
2. STMicroelectronics STGB35NB60S
3. Infineon IKW35N60H3
4. Toshiba GT35J321
When selecting an equivalent, ensure compatibility in terms of voltage, current, switching characteristics, and package type. Always cross-check the datasheets for exact specifications.
1. Fairchild FGA35N60 (now ON Semiconductor)
2. STMicroelectronics STGB35NB60S
3. Infineon IKW35N60H3
4. Toshiba GT35J321
When selecting an equivalent, ensure compatibility in terms of voltage, current, switching characteristics, and package type. Always cross-check the datasheets for exact specifications.
Features
The IRGP35B60PDPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. Here are its key features:
1. Voltage and Current Ratings: The device typically supports a collector-emitter voltage (V_CE) of 600V and a collector current (I_C) of around 35A.
2. Low Saturation Voltage: It features a low V_CE(sat), which helps reduce conduction losses and improve efficiency.
3. Switching Speed: The IGBT is designed for fast switching, providing efficiency in both high-frequency and high-power applications.
4. Rugged Design: It has a robust structure that makes it suitable for demanding environments and ensures reliable performance over time.
5. Thermal Performance: The device offers good thermal characteristics, facilitating effective heat dissipation and enhancing device longevity.
6. Package Type: It is available in a TO-247 package, providing a standard form factor for easy integration into various systems.
7. Applications: Common in motor drives, induction heating, and uninterruptible power supplies (UPS).
These features make the IRGP35B60PDPBF a reliable choice for efficient power handling in industrial and consumer electronic applications.
1. Voltage and Current Ratings: The device typically supports a collector-emitter voltage (V_CE) of 600V and a collector current (I_C) of around 35A.
2. Low Saturation Voltage: It features a low V_CE(sat), which helps reduce conduction losses and improve efficiency.
3. Switching Speed: The IGBT is designed for fast switching, providing efficiency in both high-frequency and high-power applications.
4. Rugged Design: It has a robust structure that makes it suitable for demanding environments and ensures reliable performance over time.
5. Thermal Performance: The device offers good thermal characteristics, facilitating effective heat dissipation and enhancing device longevity.
6. Package Type: It is available in a TO-247 package, providing a standard form factor for easy integration into various systems.
7. Applications: Common in motor drives, induction heating, and uninterruptible power supplies (UPS).
These features make the IRGP35B60PDPBF a reliable choice for efficient power handling in industrial and consumer electronic applications.
Pinout
The IRGP35B60PDPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high efficiency and fast switching applications. It is typically used in motor drives, power inverters, and other power electronic applications.
Pin Count and Functions:
1. Collector (C) - This is the terminal through which the main current enters the IGBT. It is connected to the main power supply.
2. Gate (G) - This terminal is used to control the IGBT. By applying a voltage to the gate, you can turn the IGBT on or off, allowing or preventing current flow between the collector and emitter.
3. Emitter (E) - This is the terminal through which the current exits the IGBT. It is typically connected to the load in a circuit.
Thus, the IRGP35B60PDPBF comes with three pins for these essential functions.
Pin Count and Functions:
1. Collector (C) - This is the terminal through which the main current enters the IGBT. It is connected to the main power supply.
2. Gate (G) - This terminal is used to control the IGBT. By applying a voltage to the gate, you can turn the IGBT on or off, allowing or preventing current flow between the collector and emitter.
3. Emitter (E) - This is the terminal through which the current exits the IGBT. It is typically connected to the load in a circuit.
Thus, the IRGP35B60PDPBF comes with three pins for these essential functions.
Manufacturer
The IRGP35B60PDPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in the design, development, and manufacturing of semiconductor solutions. It was originally part of Siemens AG but became an independent company in 1999. Infineon is known for producing a wide range of semiconductor products including power semiconductors, microcontrollers, sensors, and security solutions. The company serves various industries such as automotive, industrial, communications, consumer electronics, and security applications. Infineon is recognized for its focus on energy efficiency, mobility, and security, contributing to technological advancements across diverse sectors.
Application
The IRGP35B60PDPBF is an IGBT (Insulated Gate Bipolar Transistor) used in various power electronic applications. Key application areas include:
1. Motor Drives: Used in industrial motor control systems and electric vehicle powertrains.
2. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
3. Welding Machines: Employed for controlling welding power.
4. Switching Power Supplies: Used for efficient power conversion in SMPS.
5. Induction Heating: Applied in induction cooktops and industrial heating systems.
Its high efficiency and fast switching capabilities make it suitable for applications requiring robust power handling and thermal management.
1. Motor Drives: Used in industrial motor control systems and electric vehicle powertrains.
2. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
3. Welding Machines: Employed for controlling welding power.
4. Switching Power Supplies: Used for efficient power conversion in SMPS.
5. Induction Heating: Applied in induction cooktops and industrial heating systems.
Its high efficiency and fast switching capabilities make it suitable for applications requiring robust power handling and thermal management.
Package
The IRGP35B60PDPBF is an IGBT (Insulated Gate Bipolar Transistor) that comes in a TO-247AC package type.
