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IRL3705NPBF
+BOMMOSFET N-CH 55V 89A TO220AB
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ManufacturerInfineon Technologies
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Mfr. Part #IRL3705NPBF
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Datasheet IRL3705NPBF DataSheet
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In Stock7637
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Specifications
| Attribute | Value |
| Supplier | Rochester Electronics, LLC,Infineon Technologies |
| Package / Case | Bulk,Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 89A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4V, 10V |
| Rds On(Max) @ Id Vgs | 10mOhm @ 46A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 98 nC @ 5 V |
| Vgs(Max) | ±16V |
| Input Capacitance(Ciss)(Max) @ Vds | 3600 pF @ 25 V |
| Power Dissipation (Max) | 170W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Overview
Description
The course could be an introduction to a specialized topic, possibly within the field of International Relations (IR), given the "IRL" prefix. It might focus on advanced theories, case studies, or new paradigms in the field, preparing students to analyze and engage with contemporary global issues. The "NPBF" might denote a particular focus or methodology, perhaps related to policy formulation, non-profit sector studies, or another specialized area.
Typically, an introductory course would cover foundational concepts, key theories, major global challenges, and analytical skills necessary for the field. Students might explore topics such as diplomacy, international policy analysis, global governance, and the role of international organizations.
For precise details, you would need to consult the course syllabus or contact the offering institution directly.
Equivalent
Features
1. N-Channel MOSFET: It is designed for fast switching and efficient power management applications.
2. Voltage and Current Ratings: It has a maximum drain-source voltage (V_ds) of 55V and a continuous drain current (I_d) rating of 62A, making it suitable for high-power applications.
3. R_ds(on) Resistance: The on-resistance is typically low, around 23 mΩ, which helps in minimizing the power loss and improving efficiency.
4. Package: It is available in a TO-220AB package, which is commonly used for through-hole power semiconductors, facilitating easy mounting and heat dissipation.
5. High-Speed Switching: The device offers fast switching capabilities, which is beneficial in applications requiring quick on/off cycles.
6. Thermal Performance: It is designed to handle high junction temperatures, enhancing its reliability in demanding conditions.
These features make the IRL3705NPBF suitable for a variety of applications, including motor drives, power supplies, and other power management systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is in the "on" or "off" state.
2. Drain (D): This pin is the main current-carrying terminal. When the MOSFET is "on," current flows from the drain to the source.
3. Source (S): This pin serves as the return path for the current flowing through the drain.
The IRL3705NPBF is an N-channel MOSFET, which means it is designed to conduct current when a positive voltage is applied to the gate relative to the source. It is commonly used in applications requiring high-speed switching and efficient power management.
Manufacturer
Application
1. Power Management: Used in DC-DC converters, voltage regulation, and power supply circuits.
2. Motor Control: Employed in motor drivers for industrial and consumer applications.
3. Switching Applications: Utilized in high-speed switching for inverters and power amplifiers.
4. Automotive Electronics: Implemented in electronic control units (ECUs) for vehicles.
5. Consumer Electronics: Applied in devices like TVs, audio equipment, and home appliances.
6. LED Lighting: Used in LED drivers for efficient lighting solutions.
Its features make it suitable for environments requiring high power efficiency and fast switching.