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IRLB3813PBF
+BOMMOSFET N-CH 30V 260A TO220AB
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ManufacturerInfineon Technologies
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Mfr. Part #IRLB3813PBF
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Datasheet IRLB3813PBF DataSheet
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Package TO-220-3
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In Stock6841
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Specifications
| Attribute | Value |
| Package / Case | Bulk,Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 260A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.95mOhm @ 60A, 10V |
| Vgs(th)(Max) @ Id | 2.35V @ 150µA |
| Gate Charge(Qg)(Max) @ Vgs | 86 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 8420 pF @ 15 V |
| Power Dissipation (Max) | 230W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Overview
Description
IRLB could denote a specific department or field of study, such as International Relations, Law, or Business. The number 3813 often signifies the course level and sequence, with "3" at the beginning suggesting it is an upper-level undergraduate course. PBF might represent a particular focus or subfield within the course, such as Policy and Business Frameworks.
An "Introduction" course would typically cover foundational concepts, theories, and methods relevant to the field. It might include lectures, readings, discussions, and assessments designed to provide a comprehensive overview and prepare students for more advanced study.
For accurate details, including the specific content and objectives, it is recommended to consult the course syllabus or the academic institution offering the course.
Equivalent
Features
1. Low On-Resistance: It offers a very low R_DS(on) of approximately 7.5 mΩ, which minimizes power losses and enhances efficiency.
2. High Current Capacity: The device can handle continuous drain current up to 140A, making it suitable for high-power applications.
3. Voltage Rating: It is rated for a drain-source breakdown voltage of 150V, providing ample headroom for various voltage requirements in circuit designs.
4. Fast Switching: The device is designed for fast switching speeds, which can improve performance in applications requiring rapid switching cycles.
5. Thermal Performance: With a TO-220 package, it offers good thermal performance, assisted by its ability to be mounted with a heat sink for better heat dissipation.
Overall, the IRLB3813PBF is suited for applications such as motor drivers, DC-DC converters, and other high-efficiency power management systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET's operation. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is turned on. It is connected to the load.
3. Source (S): This pin is connected to the ground or the negative side of the load circuit in an N-channel MOSFET.
The IRLB3813PBF is commonly used in applications that require high efficiency and fast switching, such as in power supplies, motor controllers, and various switching applications. It is known for its low on-resistance and high current-carrying capability.
Manufacturer
Application
1. DC-DC Converters: Used in power supplies to efficiently convert voltage levels.
2. Motor Control: Common in brushless DC motor controllers and drivers for improved efficiency.
3. Battery Management: Utilized in battery protection and charging circuits.
4. Uninterruptible Power Supplies (UPS): Helps in switching and managing power flow.
5. Inverters: Used in solar inverters and other renewable energy systems for power conversion.
6. Automotive Electronics: Applicable in automotive power systems for switching and controlling loads.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.