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IRLL024NTRPBF
+BOMMOSFET N-CH 55V 3.1A SOT223
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ManufacturerInfineon Technologies
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Mfr. Part #IRLL024NTRPBF
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Datasheet IRLL024NTRPBF DataSheet
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Package TO-261-4,TO-261AA
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In Stock5878
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 3.1A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4V, 10V |
| RdsOn(Max)@IdVgs | 65mOhm @ 3.1A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15.6 nC @ 5 V |
| Vgs(Max) | ±16V |
| InputCapacitance(Ciss)(Max)@Vds | 510 pF @ 25 V |
| PowerDissipation(Max) | 1W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223 |
Overview
Description
Key features of the IRLL024NTRPBF include:
1. N-Channel MOSFET: It is designed as an N-channel device, which means it conducts when a positive voltage is applied to the gate relative to the source.
2. Voltage and Current Ratings: This MOSFET is designed to handle specific voltage and current levels, making it suitable for various medium power applications.
3. Package Type: It often comes in a standard package type such as a TO-252, which allows for surface mounting on PCBs (Printed Circuit Boards).
4. Efficiency: Known for its low on-resistance and fast switching capabilities, contributing to higher efficiency in electronic circuits.
5. Applications: Commonly used in industrial, automotive, and consumer electronics for effective power switching and management.
This combination of features makes it a versatile component in electronic engineering.
Equivalent
1. NXP's BSS138
2. ON Semiconductor's 2N7002
3. Vishay's Si2302DS or Si2302BDS
4. STMicroelectronics’ STN3NF06L
Always verify specifications like Vds, Id, Rds(on), and package to ensure compatibility for your specific application.
Features
1. Voltage and Current Ratings: It is typically rated for a drain-source voltage (V_DS) around 20V and can handle continuous current (I_D) up to several amperes, depending on specific conditions.
2. Low On-Resistance: This MOSFET offers low on-state resistance (R_DS(on)), which reduces power loss and heat generation, improving efficiency.
3. Package Type: It usually comes in a compact package like a TO-252, which is ideal for surface-mount applications.
4. Thermal Performance: The design includes efficient thermal management, often with good thermal resistance ratings, allowing it to operate effectively in high-temperature environments.
5. Applications: It is commonly used in DC-DC converters, load switching, and other power management applications in both consumer and industrial electronics.
6. Ruggedness: Built to withstand high levels of electrical stress, it offers robustness against voltage spikes and overcurrent situations.
These features make the IRLL024NTRPBF suitable for various applications requiring efficient, reliable power switching.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can switch the MOSFET on or off.
2. Drain (D): This pin is where the main current flows out from the MOSFET when it is in the on state.
3. Source (S): This pin is the return path for the current flowing through the drain.
4. Tab (D): Often connected internally to the drain terminal, it serves for heat dissipation and may be connected to the drain in the actual application.
Ensure to refer to the specific datasheet for precise technical details and pin configurations as implementations can vary by manufacturer.
Manufacturer
Application
1. Power Management: Utilized in power supply circuits for efficient switching and regulation.
2. DC-DC Converters: Operates in voltage conversion applications for improved energy efficiency.
3. Motor Control: Used in driving motors in industrial and consumer electronics.
4. LED Drivers: Facilitates the control and operation of LED lighting systems.
5. Switching Applications: Suitable for high-speed switching in various electronic devices.
Its low on-resistance and high-speed switching capabilities make it ideal for these applications, ensuring minimal power loss and enhanced performance.