Images are for reference only
IRLR3103TR
+BOMMOSFET N-CH 30V 55A DPAK
-
ManufacturerInfineon Technologies
-
Mfr. Part #IRLR3103TR
-
In Stock3050
365 Days Quality Guarantee
7*24 hours service quarantee
90-day after-sales guarantee
Genuine Product Guarantee
Specifications
| Attribute | Value |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR) |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 55A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 19mOhm @ 33A, 10V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 50 nC @ 4.5 V |
| Vgs(Max) | ±16V |
| Input Capacitance(Ciss)(Max) @ Vds | 1600 pF @ 25 V |
| Power Dissipation (Max) | 107W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
Overview
Description
IRLR3103TR is a logic-level N-channel enhancement-mode power MOSFET from International Rectifier (now Infineon). It’s intended for switching and power‑control tasks in compact, low‑voltage/high‑current circuits such as DC–DC converters, motor drivers, and load switches.
Key points:
- Logic-level gate drive: can be driven from standard 4.5–10 V logic signals.
- Low on-resistance for efficient conduction.
- Suitable for surface-mount use; “TR” typically indicates Tape & Reel packaging.
What to check in the datasheet:
- Vds (drain‑to‑source voltage) and Id (continuous drain current) ratings.
- Rds(on) at your gate drive voltage (e.g., 4.5 V and 10 V).
- Vgs,max, thermal resistance, and avalanche energy rating.
Design notes:
- Provide adequate heat sinking or copper area.
- Use proper gate protection, gate resistor, and flyback protection for inductive loads.
- Ensure operation within the safe operating area and device limits.
For exact specs and packaging, consult the latest Infineon/IR datasheet.
Key points:
- Logic-level gate drive: can be driven from standard 4.5–10 V logic signals.
- Low on-resistance for efficient conduction.
- Suitable for surface-mount use; “TR” typically indicates Tape & Reel packaging.
What to check in the datasheet:
- Vds (drain‑to‑source voltage) and Id (continuous drain current) ratings.
- Rds(on) at your gate drive voltage (e.g., 4.5 V and 10 V).
- Vgs,max, thermal resistance, and avalanche energy rating.
Design notes:
- Provide adequate heat sinking or copper area.
- Use proper gate protection, gate resistor, and flyback protection for inductive loads.
- Ensure operation within the safe operating area and device limits.
For exact specs and packaging, consult the latest Infineon/IR datasheet.
Equivalent
Exact equivalents depend on package and specs. The IRLR3103TR is a 30 V, logic‑level N‑channel MOSFET. Please provide: package (SO‑8 or D‑PAK), required Id (A), target Rds(on), and gate drive (4 V or 10 V). With those, I’ll give cross‑references (Infineon/ST/ON Semiconductor) that match the specs.
Features
IRLR3103TR is an N-channel logic-level HEXFET power MOSFET. Key features:
- 30 V maximum drain–source voltage (VDS)
- Logic-level gate drive (ON with modest VGS; suitable for 4.5–10 V drive)
- Very low on-resistance (low conduction losses)
- High current capability for switching/regulation apps
- Fast switching characteristics with low gate charge
- Robust avalanche energy tolerance for rugged operation
- Suitable for switching power supplies, motor drivers, and DC-DC converters
- Tape & Reel (TR) packaging for automated assembly
- Pb-free, RoHS compliant
Note: exact RDS(on), ID rating, and switching specs are in the datasheet.
- 30 V maximum drain–source voltage (VDS)
- Logic-level gate drive (ON with modest VGS; suitable for 4.5–10 V drive)
- Very low on-resistance (low conduction losses)
- High current capability for switching/regulation apps
- Fast switching characteristics with low gate charge
- Robust avalanche energy tolerance for rugged operation
- Suitable for switching power supplies, motor drivers, and DC-DC converters
- Tape & Reel (TR) packaging for automated assembly
- Pb-free, RoHS compliant
Note: exact RDS(on), ID rating, and switching specs are in the datasheet.
Pinout
- Pin count: 3 pins (Gate, Drain, Source). The package also has a drain tab connected to Drain.
- Function: N-channel enhancement-mode power MOSFET used for switching DC loads (logic-level gate drive).
- Function: N-channel enhancement-mode power MOSFET used for switching DC loads (logic-level gate drive).
Manufacturer
Manufacturer: International Rectifier (IR), a semiconductor company that specializes in power management devices (e.g., power MOSFETs, IGBTs, drivers). IR is now part of Infineon Technologies, a German multinational semiconductor company.
Application
IRLR3103TR is a 30V N-channel logic-level MOSFET. Common application areas include:
- Switch-mode power supplies and DC-DC converters (buck/boost)
- Motor control circuits (DC motors, stepper/BLDC with proper gate drive)
- Load switching and power management in battery-powered devices
- Solar charge controllers and LED driver circuits
- General-purpose PWM switching in microcontroller-based designs (low-side/high-side switching with driver circuitry)
- Switch-mode power supplies and DC-DC converters (buck/boost)
- Motor control circuits (DC motors, stepper/BLDC with proper gate drive)
- Load switching and power management in battery-powered devices
- Solar charge controllers and LED driver circuits
- General-purpose PWM switching in microcontroller-based designs (low-side/high-side switching with driver circuitry)
Package
IRLR3103TR is a single N-channel power MOSFET in a DPAK (TO-252) surface-mount package, Tape-and-Reel.
