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IS43TR16640B-15GBLI
+BOMIC DRAM 1GBIT PAR 96TWBGA
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ManufacturerISSI, Integrated Silicon Solution Inc
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Mfr. Part #IS43TR16640B-15GBLI
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Datasheet IS43TR16640B-15GBLI DataSheet
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In Stock8430
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Specifications
| Attribute | Value |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 1Gbit |
| Memory Organization | 64M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 667 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-TWBGA (9x13) |
| Base Product Number | IS43TR16640 |
Overview
Description
This DRAM utilizes a low-voltage operation to reduce power consumption, making it ideal for battery-powered devices. It supports various data transfer modes and has a built-in self-refresh capability, enhancing its reliability and performance in dynamic environments. The chip is designed to interface easily with microcontrollers and other digital components, facilitating seamless integration into various systems.
Overall, the IS43TR16640B-15GBLI stands out for its balance of speed, efficiency, and compact design, catering to the growing demand for high-performance memory solutions in mobile technology.
Equivalent
1. MT48LC16M16A2P-75
2. K4S641632H-UL75
3. HY57V281620G-6
4. IS43TR16640B-12GBLI (faster variant)
Ensure compatibility with voltage, timing, and organization when selecting replacements. Always verify with the manufacturer's datasheets for specific applications.
Features
1. Density: 1Gb (Gigabit) capacity organized as 128M x 8 bits.
2. Data Rate: Operates at 15ns access time, supporting DDR3 speeds up to 1600 MT/s.
3. Package Type: Available in a compact 78-ball TFBGA (Thin Fine Ball Grid Array) package.
4. Voltage: Operates at a low voltage of 1.5V, making it energy-efficient.
5. Temperature Range: Suitable for operation in industrial temperature ranges.
6. Data Integrity: Features include on-die thermal sensors and advanced error correction capabilities.
7. Burst Length: Supports burst lengths of 4 and 8 for efficient data transfer.
8. Compatibility: Compliant with DDR3 SDRAM standards, ensuring wide compatibility with various systems.
This memory chip is ideal for use in consumer electronics, networking devices, and computing applications where high speed and efficiency are critical.
Pinout
The main functions of its pins include:
- Data I/O Pins (DQ0-DQ7): These 8 pins are used for data input and output.
- Address Pins (A0-A16): These pins are used to select memory locations.
- Control Pins:
- Chip Select (CS): Activates the chip for read/write operations.
- Write Enable (WE): Controls the writing of data into memory.
- Output Enable (OE): Enables data output on the data pins during read operations.
- Power and Ground Pins: Provide the necessary power supply and ground connection.
This SRAM is widely used in various applications, including networking equipment, telecommunications, and consumer electronics.
Manufacturer
Application
1. Consumer Electronics: Used in smartphones, tablets, and digital cameras for memory storage.
2. Computing Devices: Integrated into laptops and desktops for system memory.
3. Embedded Systems: Utilized in automotive electronics, industrial machines, and IoT devices.
4. Networking Equipment: Employed in routers and switches for data buffering.
5. Gaming Consoles: Acts as memory in gaming devices for enhanced performance.
Its low power consumption and high-speed access make it suitable for these diverse fields.