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IXFA4N100Q
+BOMMOSFET N-CH 1000V 4A TO263
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ManufacturerIXYS
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Mfr. Part #IXFA4N100Q
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In Stock6730
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Specifications
| Attribute | Value |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | HiPerFET™, Q Class |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain(Id) @ 25°C | 4A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 3Ohm @ 2A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 1.5mA |
| Gate Charge(Qg)(Max) @ Vgs | 39 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1050 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263AA (IXFA) |
