Images are for reference only
IXFB80N50Q2
+BOMMOSFET N-CH 500V 80A PLUS264
-
ManufacturerIXYS
-
Mfr. Part #IXFB80N50Q2
-
In Stock4415
365 Days Quality Guarantee
7*24 hours service quarantee
90-day after-sales guarantee
Genuine Product Guarantee
Specifications
| Attribute | Value |
| Package | Tube |
| Series | HiPerFET™, Q2 Class |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 80A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 60mOhm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 5.5V @ 8mA |
| GateCharge(Qg)(Max)@Vgs | 250 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 15000 pF @ 25 V |
| PowerDissipation(Max) | 960W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | PLUS264™ |
Overview
Description
Key specifications include a drain-to-source voltage (Vds) of 500V and a continuous drain current (Id) of 80A, making it suitable for high-voltage and high-current operations. The device is housed in a TO-247 package, which provides excellent thermal performance and facilitates easy mounting and integration into various electronic circuits.
IXFB80N50Q2 is typically used in applications such as power conversion, motor control, and industrial automation, where efficiency and reliability are paramount. It also includes features like fast switching speed and high avalanche capability, enhancing its performance in various demanding environments. Overall, the IXFB80N50Q2 is a versatile and reliable component for engineers and designers seeking effective solutions in power electronics.
Equivalent
1. STMicroelectronics STP80NF55: N-channel MOSFET with similar voltage and current ratings.
2. Infineon Technologies IPB80N04S4-04: Another N-channel MOSFET with comparable characteristics.
3. ON Semiconductor FDPF33N25T: Featuring similar application use.
Always verify specific parameters to ensure compatibility.
Features
1. N-Channel MOSFET: It is designed for high-efficiency power switching.
2. Voltage Rating: Capable of handling up to 500V, suitable for high-voltage applications.
3. Current Capacity: Supports a continuous current of up to 80A, allowing it to handle significant power levels.
4. Low On-Resistance: Features a low R_DS(on), which minimizes power loss during operation and increases efficiency.
5. Fast Switching: Offers rapid switching speeds, which reduce switching losses.
6. Rugged Design: Built to withstand high energy pulses in demanding environments.
7. Advanced Technology: Utilizes advanced silicon technology to enhance performance and reliability.
8. Thermal Performance: Enhanced thermal characteristics for better heat dissipation.
These features make the IXFB80N50Q2 suitable for use in various industrial, automotive, and consumer electronics applications where efficient power management is crucial.
Pinout
1. Pin Count: 3 pins.
2. Pin Functions:
- Gate (G): This pin is used to control the conduction state of the MOSFET. Applying a voltage to the gate pin allows current to flow between the drain and source.
- Drain (D): The drain pin is the terminal through which the main current flows when the MOSFET is in the "on" state.
- Source (S): The source pin is the terminal through which the current exits the MOSFET when it is conducting.
The IXFB80N50Q2, with its 500V voltage rating and 80A current capacity, is suitable for high-power applications such as power supplies, motor control, and various other power conversion systems.
Manufacturer
IXYS is known for its innovation in power semiconductors, such as MOSFETs, IGBTs, and thyristors, which are used in a wide range of applications to improve efficiency and performance. In 2018, IXYS was acquired by Littelfuse, Inc., a global leader in circuit protection and power control products. This acquisition allowed Littelfuse to expand its product portfolio and expertise in power electronics, further enhancing its capabilities in serving a diverse set of markets.