IXFB80N50Q2

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IXFB80N50Q2

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MOSFET N-CH 500V 80A PLUS264

  • ManufacturerIXYS

  • Mfr. Part #IXFB80N50Q2

  • In Stock4415

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Specifications

Attribute Value
Package Tube
Series HiPerFET™, Q2 Class
ProductStatus Not For New Designs
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 80A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 60mOhm @ 500mA, 10V
Vgs(th)(Max)@Id 5.5V @ 8mA
GateCharge(Qg)(Max)@Vgs 250 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 15000 pF @ 25 V
PowerDissipation(Max) 960W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage PLUS264™

Overview

Description

The IXFB80N50Q2 is a power MOSFET manufactured by IXYS, a company known for producing advanced power semiconductors. This particular MOSFET is designed for high-power applications due to its robust design and high-performance capabilities. It features an N-channel enhancement-mode structure with a low on-resistance, which ensures efficient conduction and minimizes power loss.
Key specifications include a drain-to-source voltage (Vds) of 500V and a continuous drain current (Id) of 80A, making it suitable for high-voltage and high-current operations. The device is housed in a TO-247 package, which provides excellent thermal performance and facilitates easy mounting and integration into various electronic circuits.
IXFB80N50Q2 is typically used in applications such as power conversion, motor control, and industrial automation, where efficiency and reliability are paramount. It also includes features like fast switching speed and high avalanche capability, enhancing its performance in various demanding environments. Overall, the IXFB80N50Q2 is a versatile and reliable component for engineers and designers seeking effective solutions in power electronics.

Equivalent

The IXFB80N50Q2 is a power MOSFET, and its equivalents can include products with similar specifications like voltage, current, and package type. Common equivalents may include:
1. STMicroelectronics STP80NF55: N-channel MOSFET with similar voltage and current ratings.
2. Infineon Technologies IPB80N04S4-04: Another N-channel MOSFET with comparable characteristics.
3. ON Semiconductor FDPF33N25T: Featuring similar application use.
Always verify specific parameters to ensure compatibility.

Features

The IXFB80N50Q2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically used for switching and amplifying electronic signals in various applications. Here are its key features:
1. N-Channel MOSFET: It is designed for high-efficiency power switching.
2. Voltage Rating: Capable of handling up to 500V, suitable for high-voltage applications.
3. Current Capacity: Supports a continuous current of up to 80A, allowing it to handle significant power levels.
4. Low On-Resistance: Features a low R_DS(on), which minimizes power loss during operation and increases efficiency.
5. Fast Switching: Offers rapid switching speeds, which reduce switching losses.
6. Rugged Design: Built to withstand high energy pulses in demanding environments.
7. Advanced Technology: Utilizes advanced silicon technology to enhance performance and reliability.
8. Thermal Performance: Enhanced thermal characteristics for better heat dissipation.
These features make the IXFB80N50Q2 suitable for use in various industrial, automotive, and consumer electronics applications where efficient power management is crucial.

Pinout

The IXFB80N50Q2 is a power MOSFET designed by IXYS Corporation. It typically comes in a TO-247 package, which is a standard configuration for power transistors and MOSFETs. The TO-247 package usually features three pins. Here is a concise overview of the pin count and function:
1. Pin Count: 3 pins.
2. Pin Functions:
- Gate (G): This pin is used to control the conduction state of the MOSFET. Applying a voltage to the gate pin allows current to flow between the drain and source.
- Drain (D): The drain pin is the terminal through which the main current flows when the MOSFET is in the "on" state.
- Source (S): The source pin is the terminal through which the current exits the MOSFET when it is conducting.
The IXFB80N50Q2, with its 500V voltage rating and 80A current capacity, is suitable for high-power applications such as power supplies, motor control, and various other power conversion systems.

Manufacturer

The IXFB80N50Q2 is manufactured by IXYS Corporation. IXYS is a company that specializes in the development and production of advanced power semiconductor devices, integrated circuits, and systems. Founded in 1983 and headquartered in Milpitas, California, IXYS focuses on providing energy-efficient solutions for power management and conversion applications across various industries, including telecommunications, automotive, industrial, consumer electronics, and renewable energy.
IXYS is known for its innovation in power semiconductors, such as MOSFETs, IGBTs, and thyristors, which are used in a wide range of applications to improve efficiency and performance. In 2018, IXYS was acquired by Littelfuse, Inc., a global leader in circuit protection and power control products. This acquisition allowed Littelfuse to expand its product portfolio and expertise in power electronics, further enhancing its capabilities in serving a diverse set of markets.

Application

The IXFB80N50Q2 is a power MOSFET known for its high efficiency and fast switching capabilities. It is commonly used in applications such as DC-DC converters, power supplies, motor control circuits, and inverters. Its robust design allows it to handle high current and voltage, making it suitable for industrial and automotive systems. Additionally, this MOSFET is often utilized in renewable energy systems like solar inverters, and in uninterruptible power supplies (UPS) due to its reliability and performance.

Package

The IXFB80N50Q2 is packaged in a TO-247 discrete package, which is commonly used for high-power semiconductor devices.

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