IXFN210N30P3

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IXFN210N30P3

+BOM

MOSFET N-CH 300V 192A SOT227B

  • ManufacturerIXYS

  • Mfr. Part #IXFN210N30P3

  • In Stock3899

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Specifications

Attribute Value
Supplier IXYS
Package / Case Tube
Series HiPerFET™, Polar3™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain(Id) @ 25°C 192A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 14.5mOhm @ 105A, 10V
Vgs(th)(Max) @ Id 5V @ 8mA
Gate Charge(Qg)(Max) @ Vgs 268 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 16200 pF @ 25 V
Power Dissipation (Max) 1500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B