IXFP8N65X2M

Images are for reference only

IXFP8N65X2M

+BOM

MOSFET N-CH 650V 8A TO220

  • ManufacturerIXYS

  • Mfr. Part #IXFP8N65X2M

  • In Stock9729

365 Days Quality Guarantee

7*24 hours service quarantee

90-day after-sales guarantee

Genuine Product Guarantee

Specifications

Attribute Value
Supplier IXYS
Package / Case Tube
Series HiPerFET™, Ultra X2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 8A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 450mOhm @ 4A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 11 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 790 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Isolated Tab

Products related to IXFP8N65X2M