IXFQ14N80P

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IXFQ14N80P

+BOM

MOSFET N-CH 800V 14A TO3P

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Specifications

Attribute Value
Supplier IXYS
Package / Case Tube
Series HiPerFET™, Polar
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain(Id) @ 25°C 14A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 720mOhm @ 500mA, 10V
Vgs(th)(Max) @ Id 5.5V @ 4mA
Gate Charge(Qg)(Max) @ Vgs 61 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 3900 pF @ 25 V
Power Dissipation (Max) 400W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P

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