IXFT52N50P2

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IXFT52N50P2

+BOM

MOSFET N-CH 500V 52A TO268

  • ManufacturerIXYS

  • Mfr. Part #IXFT52N50P2

  • In Stock6858

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Specifications

Attribute Value
Supplier IXYS
Package / Case Tube
Series HiPerFET™, PolarP2™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain(Id) @ 25°C 52A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 120mOhm @ 26A, 10V
Vgs(th)(Max) @ Id 4.5V @ 4mA
Gate Charge(Qg)(Max) @ Vgs 113 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 6800 pF @ 25 V
Power Dissipation (Max) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA

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