IXGH72N60A3

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IXGH72N60A3

+BOM

IGBT PT 600V 75A TO-247AD

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Specifications

Attribute Value
Series GenX3™, XPT™
Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 400 A
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 60A
Power - Max 540 W
Switching Energy 1.38mJ (on), 3.5mJ (off)
Input Type Standard
Gate Charge 230 nC
Td (on / off) @ 25°C 31ns/320ns
Test Condition 480V, 50A, 3Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXGH72

Overview

Description

The IXGH72N60A3 is a high-voltage power MOSFET designed for various applications, including power supplies and motor drives. It features a voltage rating of 600V and a current rating of 72A, making it suitable for high-efficiency switching operations. The device offers low R_DS(on), which minimizes conduction losses and enhances thermal performance. Its fast switching speed allows for improved efficiency in PWM (Pulse Width Modulation) applications.
The IXGH72N60A3 is housed in a TO-220 package, facilitating easy heat dissipation and mounting on heatsinks. This MOSFET is commonly used in automotive, industrial, and renewable energy applications, such as inverters and converters, due to its robustness and reliability under various conditions.
In summary, the IXGH72N60A3 is an effective choice for designers seeking high-performance semiconductor solutions in demanding applications, combining high voltage tolerance, efficient thermal management, and rapid switching capabilities.

Equivalent

The IXGH72N60A3 is an IGBT (Insulated Gate Bipolar Transistor) with a voltage rating of 600V and a current rating of 72A. Equivalent products include:
1. Infineon IGBT series, such as IGBT 600V 72A.
2. ON Semiconductor MBRF 600V series.
3. Fairchild FGA72N60 series.
Always verify specifications before substitution to ensure compatibility for your application.

Features

The IXGH72N60A3 is an N-channel IGBT (Insulated Gate Bipolar Transistor) designed for high-voltage applications. Key features include:
1. Voltage Rating: 600V, suitable for high-voltage power electronics.
2. Current Rating: Up to 72A, allowing it to handle significant power loads.
3. Low On-State Voltage: Provides efficient operation with reduced conduction losses.
4. Fast Switching Speed: Enhances performance in high-frequency applications.
5. Thermal Stability: Designed to operate under high temperatures, improving reliability.
6. Gate Threshold Voltage: Low gate drive voltage requirement facilitates easier interface with control circuits.
7. Robust Package: Available in a TO-247 package, providing effective heat dissipation.
These features make the IXGH72N60A3 suitable for applications such as motor drives, inverters, and power converters in renewable energy systems and industrial equipment.

Pinout

The IXGH72N60A3 is a high-voltage, N-channel MOSFET designed for power applications. It typically comes in a TO-247 package, which has three main pins.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output terminal where the load connects. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This is the terminal that connects to the ground or the reference point of the circuit. Current flows into the source when the MOSFET is conducting.
In summary, the IXGH72N60A3 has a total of three pins: Gate, Drain, and Source, each serving a critical function in the operation of the MOSFET in electronic circuits.

Manufacturer

The IXGH72N60A3 is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in power semiconductor solutions and integrated circuits, focusing on high-performance devices for various applications including automotive, industrial, and renewable energy systems. The company is known for its innovations in power management, offering products like MOSFETs, IGBTs, and other semiconductor devices that are critical for efficient energy conversion and control. Littelfuse, as a parent company, operates in the broader field of electrical and electronic components, emphasizing circuit protection, power control, and connectivity solutions.

Application

The IXGH72N60A3 is an IGBT (Insulated Gate Bipolar Transistor) designed for high-power applications. Its primary application areas include:
1. Power Inverters: Used in renewable energy systems like solar and wind.
2. Motor Drives: Employed in industrial motor control and electric vehicles.
3. Switching Power Supplies: Utilized in high-efficiency power conversion systems.
4. Welding Equipment: Implemented in electric arc welding applications.
5. UPS Systems: Incorporated in uninterruptible power supplies for backup power.
Its high voltage and current ratings make it suitable for demanding applications requiring efficient switching and thermal performance.

Package

The IXGH72N60A3 is packaged in a TO-247 format. This package type is commonly used for high-power applications, providing good thermal performance and ease of mounting on heat sinks.

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