IXTA05N100HV

Images are for reference only

IXTA05N100HV

+BOM

MOSFET N-CH 1000V 750MA TO263

365 Days Quality Guarantee

7*24 hours service quarantee

90-day after-sales guarantee

Genuine Product Guarantee

Specifications

Attribute Value
Supplier IXYS
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain(Id) @ 25°C 750mA (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 17Ohm @ 375mA, 10V
Vgs(th)(Max) @ Id 4.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 7.8 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 260 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263HV

Products related to IXTA05N100HV