IXTA08N100P

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IXTA08N100P

+BOM

MOSFET N-CH 1000V 800MA TO263

  • ManufacturerIXYS

  • Mfr. Part #IXTA08N100P

  • In Stock7366

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Specifications

Attribute Value
Supplier IXYS
Package / Case Tube
Series Polar
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain(Id) @ 25°C 800mA (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 20Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 4V @ 50µA
Gate Charge(Qg)(Max) @ Vgs 11.3 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 240 pF @ 25 V
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA

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