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IXTA20N65X
+BOMMOSFET N-CH 650V 20A TO263
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ManufacturerIXYS
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Mfr. Part #IXTA20N65X
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Datasheet IXTA20N65X DataSheet
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In Stock9046
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Specifications
| Attribute | Value |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | Ultra X |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 210mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 5.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1390 pF @ 25 V |
| Power Dissipation (Max) | 320W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263AA |
