IXTA32P20T

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IXTA32P20T

+BOM

MOSFET P-CH 200V 32A TO263

  • ManufacturerIXYS

  • Mfr. Part #IXTA32P20T

  • In Stock280

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Specifications

Attribute Value
Supplier IXYS
Package / Case Tube
Series TrenchP™
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain(Id) @ 25°C 32A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 130mOhm @ 16A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 185 nC @ 10 V
Vgs(Max) ±15V
Input Capacitance(Ciss)(Max) @ Vds 14500 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA

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