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IXTA3N100D2
+BOMMOSFET N-CH 1000V 3A TO263
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ManufacturerIXYS
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Mfr. Part #IXTA3N100D2
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In Stock9490
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Specifications
| Attribute | Value |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | Depletion |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain(Id) @ 25°C | 3A (Tc) |
| Rds On(Max) @ Id Vgs | 5.5Ohm @ 1.5A, 0V |
| Gate Charge(Qg)(Max) @ Vgs | 37.5 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1020 pF @ 25 V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263AA |
