IXTH10N100D

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IXTH10N100D

+BOM

MOSFET N-CH 1000V 10A TO247

  • ManufacturerIXYS

  • Mfr. Part #IXTH10N100D

  • In Stock8395

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Specifications

Attribute Value
Supplier IXYS
Package / Case Tube
Series Depletion
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain(Id) @ 25°C 10A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 1.4Ohm @ 10A, 10V
Vgs(th)(Max) @ Id 3.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 130 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 2500 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 400W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)

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