Specifications
| Attribute | Value |
| Package / Case | Tube |
| Series | Ultra X |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 52A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 68mOhm @ 26A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 113 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 4350 pF @ 25 V |
| Power Dissipation (Max) | 660W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 (IXTH) |
Overview
Description
The IXTH52N65X is a high-performance N-channel MOSFET from Infineon Technologies, designed for power electronics applications. Key features include:
- Voltage Rating: 650V
- Current Rating: 52A (continuous)
- Low On-Resistance (RDS(on)): Typically 65mΩ (at 10V VGS)
- Fast Switching: Optimized for efficiency in high-frequency circuits
- Robust Design: Avalanche-rated for rugged operation
It is commonly used in:
- Switched-Mode Power Supplies (SMPS)
- Motor Drives
- Inverters & Industrial Power Systems
The device is housed in a TO-247 package, ensuring good thermal performance. Its low gate charge and high-speed switching make it suitable for energy-efficient designs.
For detailed specs, refer to the datasheet from Infineon.
- Voltage Rating: 650V
- Current Rating: 52A (continuous)
- Low On-Resistance (RDS(on)): Typically 65mΩ (at 10V VGS)
- Fast Switching: Optimized for efficiency in high-frequency circuits
- Robust Design: Avalanche-rated for rugged operation
It is commonly used in:
- Switched-Mode Power Supplies (SMPS)
- Motor Drives
- Inverters & Industrial Power Systems
The device is housed in a TO-247 package, ensuring good thermal performance. Its low gate charge and high-speed switching make it suitable for energy-efficient designs.
For detailed specs, refer to the datasheet from Infineon.
Features
The IXTH52N65X is a high-voltage N-channel MOSFET with the following key features:
- Voltage Rating: 650V, suitable for high-power applications.
- Current Rating: 52A (continuous drain current).
- Low On-Resistance (RDS(on)): Typically 0.065Ω, reducing conduction losses.
- Fast Switching: Optimized for high-frequency applications.
- Avalanche Energy Rated: Enhances reliability in rugged conditions.
- TO-247 Package: Robust thermal performance for efficient heat dissipation.
- Applications: Used in power supplies, inverters, motor drives, and industrial systems.
This MOSFET balances high efficiency, durability, and performance in demanding environments.
- Voltage Rating: 650V, suitable for high-power applications.
- Current Rating: 52A (continuous drain current).
- Low On-Resistance (RDS(on)): Typically 0.065Ω, reducing conduction losses.
- Fast Switching: Optimized for high-frequency applications.
- Avalanche Energy Rated: Enhances reliability in rugged conditions.
- TO-247 Package: Robust thermal performance for efficient heat dissipation.
- Applications: Used in power supplies, inverters, motor drives, and industrial systems.
This MOSFET balances high efficiency, durability, and performance in demanding environments.
Pinout
The IXTH52N65X is a high-voltage N-channel MOSFET in a TO-247 package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – High-voltage terminal, connected to the load.
3. Source (S) – Ground reference, completes the circuit.
Key Features:
- 650V drain-source voltage (VDS).
- 52A continuous drain current (ID).
- Low on-resistance (RDS(on)) for efficient power handling.
- Designed for high-power switching applications like inverters and motor drives.
The TO-247 package ensures robust thermal performance.
1. Gate (G) – Controls the switching operation.
2. Drain (D) – High-voltage terminal, connected to the load.
3. Source (S) – Ground reference, completes the circuit.
Key Features:
- 650V drain-source voltage (VDS).
- 52A continuous drain current (ID).
- Low on-resistance (RDS(on)) for efficient power handling.
- Designed for high-power switching applications like inverters and motor drives.
The TO-247 package ensures robust thermal performance.
Manufacturer
The IXTH52N65X is manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. since 2017.
IXYS was a leading semiconductor company specializing in high-performance power semiconductors, including MOSFETs, IGBTs, and thyristors, for industrial, automotive, and renewable energy applications. Littelfuse, its parent company, is a global provider of circuit protection, power control, and sensing technologies.
The IXTH52N65X is a 650V, 52A N-channel power MOSFET, designed for demanding power electronics applications.
IXYS was a leading semiconductor company specializing in high-performance power semiconductors, including MOSFETs, IGBTs, and thyristors, for industrial, automotive, and renewable energy applications. Littelfuse, its parent company, is a global provider of circuit protection, power control, and sensing technologies.
The IXTH52N65X is a 650V, 52A N-channel power MOSFET, designed for demanding power electronics applications.
Package
The IXTH52N65X is a high-voltage N-channel MOSFET typically available in a TO-247 package. This package is robust, suitable for high-power applications, and features three leads for gate, drain, and source connections. Its design ensures efficient heat dissipation, making it ideal for demanding circuits like power supplies or motor drives.
