IXTQ48N65X2M

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IXTQ48N65X2M

+BOM

DISCRETE MOSFET 48A 650V X2 TO3P

  • ManufacturerIXYS

  • Mfr. Part #IXTQ48N65X2M

  • In Stock4203

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Specifications

Attribute Value
Supplier IXYS
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 48A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 65mOhm @ 24A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 76 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 4300 pF @ 25 V
Power Dissipation (Max) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P

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