IXTT170N10P

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IXTT170N10P

+BOM

MOSFET N-CH 100V 170A TO268

  • ManufacturerIXYS

  • Mfr. Part #IXTT170N10P

  • In Stock8830

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Specifications

Attribute Value
Supplier IXYS
Package / Case Tube
Series Polar
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 170A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 9mOhm @ 500mA, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 198 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 6000 pF @ 25 V
Power Dissipation (Max) 715W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA

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