IXTY2R4N50P

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IXTY2R4N50P

+BOM

MOSFET N-CH 500V 2.4A TO252

  • ManufacturerIXYS

  • Mfr. Part #IXTY2R4N50P

  • In Stock3919

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Specifications

Attribute Value
Supplier IXYS
Package / Case Tube
Series PolarHV™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain(Id) @ 25°C 2.4A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 3.75Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 5.5V @ 25µA
Gate Charge(Qg)(Max) @ Vgs 6.1 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 240 pF @ 25 V
Power Dissipation (Max) 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA

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