JAN1N6629US

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JAN1N6629US

+BOM

DIODE GEN PURP 880V 1.4A D5B

  • ManufacturerMicrosemi Corporation

  • Mfr. Part #JAN1N6629US

  • Package E-MELF

  • In Stock7400

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Specifications

Attribute Value
Supplier Microchip Technology
Package Bulk
Series Military, MIL-PRF-19500/590
ProductStatus Active
DiodeType Standard
Voltage-DCReverse(Vr)(Max) 880 V
Current-AverageRectified(Io) 1.4A
Voltage-Forward(Vf)(Max)@If 1.4 V @ 1.4 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr) 50 ns
Current-ReverseLeakage@Vr 2 µA @ 880 V
Capacitance@VrF 40pF @ 10V, 1MHz
MountingType Surface Mount
Package/Case E-MELF
SupplierDevicePackage D-5B

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