JS28F256P30BFE

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JS28F256P30BFE

+BOM

1.7V~2V 256Mbit TSOP-56 Memory (ICs) RoHS

  • ManufacturerMicron

  • Mfr. Part #JS28F256P30BFE

  • In Stock17195

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Specifications

Attribute Value
Packaging TSOP-56
Memory Size 256Mbit
Operating temperature -40℃~+85℃
Voltage - Supply 1.7V~2V
Page Programming Time (Tpp) 110ns

Overview

Description

The JS28F256P30BFE is a specific model of Intel's StrataFlash memory. It is a 256 Mb (megabit) flash memory device that operates at 3 volts and is part of the P30 series. This series is known for its high-performance capabilities, featuring fast read and write operations, making it suitable for embedded applications that require efficient data storage and retrieval.
Key features include advanced 130nm process technology, a dual-plane architecture for simultaneous operations, and support for execute-in-place (XIP) applications, allowing code to be run directly from the flash memory. The memory is organized in uniform 128KB blocks, which simplifies storage management and enhances performance for applications involving high data throughput.
The JS28F256P30BFE is often used in applications such as mobile devices, networking equipment, and other consumer electronics where reliable and fast access to data is crucial. Its compatibility with industry-standard interfaces also makes it a versatile choice for various embedded systems.

Equivalent

The JS28F256P30BFE is a 256Mb (megabit) NOR Flash memory chip from Intel. Equivalent products might include similar NOR Flash chips from manufacturers like Micron (MT28F series), Cypress (S29GL series), or Winbond (W29GL series). It's essential to compare specifications such as memory size, voltage, package type, and read/write speeds when selecting an equivalent. Always consult the datasheets and compatibility documentation from manufacturers to ensure full compatibility with your application.

Features

The JS28F256P30BFE is a flash memory component from Intel's StrataFlash series. It features a 256 Mb (megabit) storage capacity, organized in a dual-die configuration to allow for higher density. This memory type utilizes NOR flash architecture, which offers fast read capabilities, making it suitable for applications where quick data retrieval is essential. The component operates with a 1.8V power supply, which contributes to its power efficiency.
Key features include an asynchronous I/O interface, supporting fast read speeds and reliable data storage. The StrataFlash memory technology also enables multi-level cell (MLC) storage, allowing each cell to store more than one bit of data, thereby increasing the overall storage density without sacrificing performance. It supports common flash interface (CFI) standards, enabling easy integration and compatibility with a wide range of systems. Additionally, the JS28F256P30BFE incorporates advanced security features, such as lockable regions and password protection, to ensure data integrity and security. Its robust design makes it suitable for use in embedded systems, consumer electronics, and industrial applications.

Pinout

The JS28F256P30BFE is a 256 Mb (megabit) NOR Flash memory device from Intel's P30 family. It typically comes in a 64-ball easy BGA (Ball Grid Array) package. The primary function of this device is to provide non-volatile storage, meaning it retains data without power. It is commonly used in embedded systems, mobile devices, and other applications that require reliable and fast memory access.
The pin configuration includes pins for power supply, ground, address lines, data lines, control pins (such as Chip Enable, Output Enable, and Write Enable), and others specific to NOR Flash operation. This configuration supports operations like reading, writing, and erasing memory sectors.
For precise details like the exact pin functions and layout, it is recommended to consult the datasheet or technical documentation specific to the JS28F256P30BFE, as it provides comprehensive information about the pin configuration and electrical characteristics.

Manufacturer

The JS28F256P30BFE is a product manufactured by Intel Corporation. Intel is a multinational corporation and technology company headquartered in Santa Clara, California. It is widely known for its role in the development and manufacturing of semiconductor chips, most notably its microprocessors, which are used in a majority of personal computers worldwide. In addition to microprocessors, Intel designs and manufactures other integrated circuits, network interface controllers, flash memory, graphics chips, embedded processors, and other computing and communications-related devices. The company has been a leading figure in the tech industry, driving innovation and setting benchmarks in computing technology and electronics.

Application

The JS28F256P30BFE is a 256 Mb, 1.8V, non-volatile flash memory device commonly used in various applications. Its primary applications include data storage for embedded systems, firmware storage in consumer electronics, and code storage in industrial automation systems. It's also utilized in automotive electronics, mobile devices, and communication equipment. This flash memory is chosen for its high performance, reliability, and low power consumption, making it suitable for devices requiring frequent read and write operations. Its versatility allows it to support a wide range of products, enhancing their functionality and performance.

Package

The JS28F256P30BFE is an Intel StrataFlash memory component typically housed in a 56-lead TSOP (Thin Small Outline Package). This package type is designed for surface mounting on circuit boards and is known for its compactness, making it suitable for applications requiring high-density flash memory storage.

Frequently Asked Questions


Q: What is the memory density of the JS28F256P30BFE?
A: The device has a memory size of 256 Mbit, suitable for code storage in embedded systems.


Q: What is the operating temperature range?
A: It operates from -40°C to +85°C, enabling use in industrial and automotive environments.


Q: What supply voltage does this NOR Flash require?
A: It requires a supply voltage range of 1.7V to 2V, supporting low-power designs.


Q: What is the page programming time for this memory?
A: The typical page programming time (Tpp) is 110ns, ensuring fast write operations.


Q: Is this component available in a standard TSOP package?
A: Yes, it comes in a TSOP-56 package, which is common for parallel NOR Flash devices.


Q: Can this memory be used for execute-in-place (XIP) applications?
A: Yes, as a parallel NOR Flash, it supports high-speed random access for XIP code execution.


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