JS28F512M29EWLA

Images are for reference only

JS28F512M29EWLA

+BOM

IC FLASH 512MBIT PARALLEL 56TSOP

  • ManufacturerMicron Technology Inc.

  • Mfr. Part #JS28F512M29EWLA

  • In Stock4793

365 Days Quality Guarantee

7*24 hours service quarantee

90-day after-sales guarantee

Genuine Product Guarantee

Specifications

Attribute Value
PartStatus Obsolete
DigiKeyProgrammable Verified
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NOR
MemorySize 512Mbit
MemoryOrganization 64M x 8, 32M x 16
MemoryInterface Parallel
WriteCycleTime-Word,Page 110ns
AccessTime 110 ns
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 56-TFSOP (0.724", 18.40mm Width)
SupplierDevicePackage 56-TSOP
BaseProductNumber JS28F512M29

Overview

Description

The JS28F512M29EWLA is a 512Mb (64MB) NAND Flash memory device designed for various storage applications. It utilizes a NAND architecture, offering high-density storage solutions suitable for mobile devices, consumer electronics, and embedded systems. Key features include:
1. Interface: It typically supports a parallel interface, facilitating easy integration with microcontrollers and processors.
2. Performance: The device provides fast read and program times, making it suitable for high-performance applications.
3. Endurance: It offers a significant number of program/erase cycles, ensuring reliability over time.
4. Data Retention: The JS28F512M29EWLA is designed to retain data for extended periods, typically up to 10 years under standard conditions.
5. Power Efficiency: It often includes power-saving modes, making it suitable for battery-operated devices.
Overall, the JS28F512M29EWLA serves as a versatile memory solution, balancing capacity, speed, and endurance for a variety of electronic applications.

Equivalent

The JS28F512M29EWLA chip is a 512Mb (64MB) NAND Flash memory device. Equivalent products include the Micron MT29F512G08CEAB, Samsung K9GAG08U0M, and Toshiba TH58NVG5D2KBA. Compatibility should be verified based on specific application requirements, including voltage, interface, and timing specifications.

Features

The JS28F512M29EWLA is a 512Mb (64MB) NAND Flash memory device designed for high-performance applications. Key features include:
1. Organization: Configured as 64M x 8 bits, supporting various data modes.
2. Interface: Utilizes a synchronous interface for high-speed data transfer.
3. Read Speed: Fast read access times and high throughput for efficient data retrieval.
4. Write Speed: Supports multiple program and erase cycles, optimizing data writing.
5. Endurance: Typically supports a high number of program/erase cycles, enhancing durability.
6. Data Retention: Ensures reliable data retention over a specified period.
7. Low Power Consumption: Designed for energy efficiency, making it suitable for portable devices.
8. Compatibility: Compatible with various memory controllers and systems.
9. Advanced Security: May include features for data protection and integrity.
This device is ideal for applications in consumer electronics, mobile devices, and industrial systems requiring reliable and efficient storage solutions.

Pinout

The JS28F512M29EWLA is a NAND flash memory device with a total pin count of 48 pins. This device is typically used in various applications for data storage purposes.
The primary functions of the pins include:
- Data I/O Pins (DQ0-DQ7): These pins are used for data input and output.
- Address Pins (A0-A20): These pins are utilized for addressing memory locations.
- Control Pins: This includes pins like CE# (Chip Enable), WE# (Write Enable), RE# (Read Enable), and R/B# (Ready/Busy), which control the operation of the device.
- Power Pins: VCC and VSS provide the power supply and ground connections.
- Optional Pins: Depending on specific configurations, additional pins may exist for features like hardware write protection or reset.
This structure enables the chip to interface with microcontrollers and other digital systems for non-volatile data storage.

Manufacturer

The JS28F512M29EWLA is manufactured by Numonyx, a company that specialized in non-volatile memory solutions. Numonyx was formed as a joint venture between Intel and STMicroelectronics and focused on providing Flash memory products, particularly NOR Flash memory used in a variety of applications including consumer electronics, automotive, and industrial devices.
Numonyx was later acquired by Micron Technology in 2009, enhancing Micron's portfolio of memory products. As a part of Micron, the legacy of Numonyx's innovations in Flash memory technology continues to influence the development of non-volatile memory solutions within the semiconductor industry. Micron is known for its production of memory and storage solutions, including DRAM, NAND Flash, and other advanced memory technologies.
In summary, the JS28F512M29EWLA is a product associated with Numonyx, a company that played a key role in the evolution of Flash memory technology before becoming part of Micron Technology, a leading global provider of memory and storage solutions.

Application

The JS28F512M29EWLA is a NAND flash memory device typically used in various applications, including:
1. Consumer Electronics: Smartphones, tablets, and digital cameras for data storage.
2. Embedded Systems: Industrial controllers and automotive systems for firmware storage and data logging.
3. Networking Equipment: Routers and switches for firmware and configuration storage.
4. Data Centers: Solid-state drives (SSDs) for high-performance storage solutions.
5. Internet of Things (IoT): Smart devices requiring reliable and efficient storage.
Its high capacity and performance make it suitable for applications needing fast data access and durability.

Package

The JS28F512M29EWLA is packaged in a TSOP (Thin Small Outline Package) type, specifically designed for flash memory devices. This package type is compact and suited for surface mounting on circuit boards, facilitating efficient space utilization in electronic designs.

Products related to JS28F512M29EWLA