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LM5109BMAX
+BOMIC GATE DRVR HALF-BRIDGE 8SOIC
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ManufacturerTexas Instruments
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Mfr. Part #LM5109BMAX
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Package SOIC-Narrow-8
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In Stock5435
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Obsolete |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 8V ~ 14V |
| LogicVoltage-VILVIH | 0.8V, 2.2V |
| Current-PeakOutput(SourceSink) | 1A, 1A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 108 V |
| Rise/FallTime(Typ) | 15ns, 15ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Overview
Description
The LM5109BMAX is a high-performance integrated circuit designed for driving MOSFETs and IGBTs in high-frequency switching applications. Part of the LM5109B series from Texas Instruments, it is specifically engineered for use in half-bridge configurations and features a robust design that includes a high-side and a low-side gate driver. The device supports an input voltage range of up to 100 volts, making it suitable for various applications in industrial, automotive, and power supply systems.
The LM5109BMAX provides fast switching speeds with a typical propagation delay of 35 ns, enhancing efficiency in power conversion processes. It includes features like adaptive dead-time control, undervoltage lockout for both high-side and low-side drivers, and a shoot-through protection mechanism. These features help in reducing power losses and ensuring the reliability of the power conversion system.
Packaged in an 8-pin SOIC package, the LM5109BMAX is also characterized by its thermal efficiency, allowing for operation in demanding environments. It is an ideal choice for engineers looking to design efficient and reliable power electronics systems.
The LM5109BMAX provides fast switching speeds with a typical propagation delay of 35 ns, enhancing efficiency in power conversion processes. It includes features like adaptive dead-time control, undervoltage lockout for both high-side and low-side drivers, and a shoot-through protection mechanism. These features help in reducing power losses and ensuring the reliability of the power conversion system.
Packaged in an 8-pin SOIC package, the LM5109BMAX is also characterized by its thermal efficiency, allowing for operation in demanding environments. It is an ideal choice for engineers looking to design efficient and reliable power electronics systems.
Equivalent
The LM5109BMAX is a high-voltage gate driver IC from Texas Instruments. Equivalent products include:
1. UCC27714 from Texas Instruments
2. IR2110 from Infineon Technologies
3. FAN7390 from ON Semiconductor
4. ADuM4223 from Analog Devices
These alternatives offer similar functionalities, such as high-side and low-side gate driving capabilities, but differences in specifications and features should be reviewed to ensure compatibility with your application.
1. UCC27714 from Texas Instruments
2. IR2110 from Infineon Technologies
3. FAN7390 from ON Semiconductor
4. ADuM4223 from Analog Devices
These alternatives offer similar functionalities, such as high-side and low-side gate driving capabilities, but differences in specifications and features should be reviewed to ensure compatibility with your application.
Features
The LM5109BMAX is a high-performance high-side/low-side gate driver designed for enhancing N-channel MOSFETs in a half-bridge configuration. Key features include:
1. Bootstrap Diode: Integrated bootstrap diode simplifies the design and reduces component count.
2. Wide Input Range: Operates within a wide input voltage range, typically from 9V to 14V, making it suitable for various applications.
3. High Peak Current Capability: Provides high peak sourcing and sinking current to drive large power MOSFETs effectively.
4. Fast Switching: Ensures fast switching speeds with low propagation delays, enhancing overall efficiency.
5. Undervoltage Lockout (UVLO): Protects MOSFETs by preventing operation under insufficient supply voltage conditions.
6. Thermal Protection: Includes features to prevent overheating and ensure reliability.
7. Low Power Consumption: Optimized for reduced power consumption during operation.
8. Fault Tolerance: Designed to handle harsh conditions and reduce susceptibility to faults.
9. Compact Package: Available in a small form factor, enabling compact circuit designs.
These features make the LM5109BMAX suitable for applications like motor drives, power supplies, and other high-power systems.
1. Bootstrap Diode: Integrated bootstrap diode simplifies the design and reduces component count.
2. Wide Input Range: Operates within a wide input voltage range, typically from 9V to 14V, making it suitable for various applications.
3. High Peak Current Capability: Provides high peak sourcing and sinking current to drive large power MOSFETs effectively.
4. Fast Switching: Ensures fast switching speeds with low propagation delays, enhancing overall efficiency.
5. Undervoltage Lockout (UVLO): Protects MOSFETs by preventing operation under insufficient supply voltage conditions.
6. Thermal Protection: Includes features to prevent overheating and ensure reliability.
7. Low Power Consumption: Optimized for reduced power consumption during operation.
8. Fault Tolerance: Designed to handle harsh conditions and reduce susceptibility to faults.
9. Compact Package: Available in a small form factor, enabling compact circuit designs.
These features make the LM5109BMAX suitable for applications like motor drives, power supplies, and other high-power systems.
Pinout
The LM5109BMAX is a high-voltage gate driver integrated circuit designed to drive both the high-side and low-side N-channel MOSFETs in a half-bridge configuration. It is part of the LM5109 series by Texas Instruments. The device comes in an 8-pin SOIC (Small Outline Integrated Circuit) package with the following pin functions:
1. HB (High-Side Bootstrap Supply): Supplies power to the high-side driver.
2. HO (High-Side Output): Drives the high-side N-channel MOSFET.
3. HS (High-Side Source): Connects to the source of the high-side MOSFET.
4. HI (High-Side Input): Controls the high-side driver.
5. LI (Low-Side Input): Controls the low-side driver.
6. VDD (Supply Voltage): Power supply for the low-side driver and internal circuitry.
7. LO (Low-Side Output): Drives the low-side N-channel MOSFET.
8. VSS (Ground): Ground reference for the device.
The LM5109B is designed for high-speed switching applications and provides high peak current capability to drive the MOSFET gates efficiently.
1. HB (High-Side Bootstrap Supply): Supplies power to the high-side driver.
2. HO (High-Side Output): Drives the high-side N-channel MOSFET.
3. HS (High-Side Source): Connects to the source of the high-side MOSFET.
4. HI (High-Side Input): Controls the high-side driver.
5. LI (Low-Side Input): Controls the low-side driver.
6. VDD (Supply Voltage): Power supply for the low-side driver and internal circuitry.
7. LO (Low-Side Output): Drives the low-side N-channel MOSFET.
8. VSS (Ground): Ground reference for the device.
The LM5109B is designed for high-speed switching applications and provides high peak current capability to drive the MOSFET gates efficiently.
Manufacturer
The LM5109BMAX is manufactured by Texas Instruments Incorporated. Texas Instruments (TI) is a global semiconductor company that designs and manufactures a wide range of electronic components. These components are used in various applications across industries, including automotive, industrial, personal electronics, and communications equipment. TI is particularly well-known for its analog and embedded processing products. The company focuses on innovation and providing comprehensive design resources to support engineers in developing new electronic systems.
Application
The LM5109BMAX is a high-voltage gate driver commonly used in applications such as switch-mode power supplies, motor drives, and DC-DC converters. It is particularly suitable for driving N-channel MOSFETs used in half-bridge and full-bridge power stages. The device is ideal for applications requiring high efficiency and fast switching speeds. Additionally, its robustness and ability to operate at high voltages make it suitable for industrial and automotive systems where reliability and performance are critical.
Package
The LM5109BMAX is typically packaged in a SOIC (Small Outline Integrated Circuit) package. Specifically, it comes in an 8-pin SOIC package, which is commonly used for surface-mounted integrated circuits.
