LM5112SD

The LM5112SD is Texas Instruments’ dual high-speed MOSFET gate driver for a half-bridge. It provides independent high-side and low-side gate drives, using a bootstrap supply for the high-side so its gate can be driven above the switch node. The device delivers fast edge rates with substantial peak source/sink current to quickly charge/discharge gates, and includes protections such as undervoltage lockout. It accepts TTL/CMOS-compatible inputs and typically offers an enable input and timing features to prevent shoot-through. External bootstrap components (diode and capacitor) are required, along with a VCC supply for the low-side gate drive and logic. The SD suffix denotes a surface-mount package (e.g., SOIC-8). Common applications include synchronous buck/boost regulators, motor drivers, and other switching power stages where efficient, controlled gate driving is needed.

LM5112SD is a dual high-side/low-side MOSFET gate driver. Comparable parts include:
- TI UCC27714 (dual HS/LS driver)
- ST L6382/L6386
- Renesas/Intersil HIP4082/HIP4086
- Infineon/IR IRS2101/IRS2104
Note: verify voltage rating, UVLO, drive strength, and propagation delay to ensure true interchangeability.

Here are the typical features of the TI LM5112SD gate-driver:
- Dual gate-driver IC: independent high-side (HO) and low-side (LO) outputs with separate inputs.
- Bootstrap high-side drive for driving N‑channel MOSFETs in high-side configurations.
- Wide high-voltage operating range suitable for high-side/low-side applications.
- High peak gate-drive current for fast switching (reduces overall switching losses).
- Input logic compatible with TTL/CMOS levels (3.3V/5V logic common).
- Enable/shutdown control to quickly disable outputs.
- Undervoltage lockout (UVLO) and thermal protection for safe operation.
- Shoot-through protection with configurable/dead-time control to prevent cross-conduction.
- Matched timing and fast propagation delays between channels.
- Robust protection features (faults, dv/dt immunity) for rugged operation.
- Available in standard TI package (LM5112SD) suitable for surface-mount designs.
Note: For exact electrical specs (voltage range, current, dead-time options, and package details), please consult the latest LM5112SD datasheet.

- Pin count: 8 pins (LM5112SD in an 8‑pin package, e.g., SOIC).
- Function: Dual high-side/low-side gate driver for N‑channel MOSFETs (half‑bridge). Provides HO (high-side gate) with floating supply VB/VS, LO (low-side gate) referenced to GND, driven by inputs HIN and LIN, powered from VCC with GND. Requires a bootstrap capacitor for VB–VS.

- Manufacturer: Texas Instruments (TI)
- What kind of company: An American multinational semiconductor company that designs and manufactures analog, mixed-signal, and embedded processing integrated circuits.

LM5112SD is a dual high-/low-side MOSFET gate driver (independent high-side and low-side outputs with bootstrap supply). Typical applications:
- Half-bridge gate drive for switching regulators (buck/boost/buck-boost) and VRMs
- Synchronous rectification and PWM power stages
- Motor control drives (BLDC, PMSM, stepper) and motor-inverter topologies
- Automotive and industrial power electronics (DC–DC converters, inverters, solar interfaces)
- Any application needing fast turn-on/turn-off with controlled dead time and bootstrap high-side operation

LM5112SD is in an 8-pin small-outline package (SOIC-8).