Images are for reference only
MBR200200CT
+BOMDIODE SCHOTTKY 200V 100A 2 TOWER
-
ManufacturerGeneSiC Semiconductor
-
Mfr. Part #MBR200200CT
-
Datasheet MBR200200CT DataSheet
-
Package Twin Tower
-
In Stock6236
365 Days Quality Guarantee
7*24 hours service quarantee
90-day after-sales guarantee
Genuine Product Guarantee
Specifications
| Attribute | Value |
| Supplier | GeneSiC Semiconductor |
| Package | Bulk |
| ProductStatus | Active |
| DiodeConfiguration | 1 Pair Common Cathode |
| DiodeType | Schottky |
| Voltage-DCReverse(Vr)(Max) | 200 V |
| Current-AverageRectified(Io)(perDiode) | 100A |
| Voltage-Forward(Vf)(Max)@If | 920 mV @ 100 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 3 mA @ 200 V |
| OperatingTemperature-Junction | -55°C ~ 150°C |
| MountingType | Chassis Mount |
| Package/Case | Twin Tower |
