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MBR40030CTRL
+BOMDIODE SCHOTTKY 30V 200A 2 TOWER
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ManufacturerGeneSiC Semiconductor
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Mfr. Part #MBR40030CTRL
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Datasheet MBR40030CTRL DataSheet
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Package Twin Tower
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In Stock2217
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Specifications
| Attribute | Value |
| Supplier | GeneSiC Semiconductor |
| Package | Bulk |
| ProductStatus | Obsolete |
| DiodeConfiguration | 1 Pair Common Anode |
| DiodeType | Schottky |
| Voltage-DCReverse(Vr)(Max) | 30 V |
| Current-AverageRectified(Io)(perDiode) | 200A |
| Voltage-Forward(Vf)(Max)@If | 580 mV @ 200 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 3 mA @ 30 V |
| OperatingTemperature-Junction | -55°C ~ 150°C |
| MountingType | Chassis Mount |
| Package/Case | Twin Tower |
