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MBR40035CTR
+BOMDIODE MODULE 35V 200A 2TOWER
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ManufacturerGeneSiC Semiconductor
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Mfr. Part #MBR40035CTR
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Datasheet MBR40035CTR DataSheet
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Package Twin Tower
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In Stock1
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Specifications
| Attribute | Value |
| Supplier | GeneSiC Semiconductor |
| Package | Bulk |
| ProductStatus | Active |
| DiodeConfiguration | 1 Pair Common Anode |
| DiodeType | Schottky, Reverse Polarity |
| Voltage-DCReverse(Vr)(Max) | 35 V |
| Current-AverageRectified(Io)(perDiode) | 200A |
| Voltage-Forward(Vf)(Max)@If | 700 mV @ 200 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 1 mA @ 35 V |
| OperatingTemperature-Junction | -55°C ~ 150°C |
| MountingType | Chassis Mount |
| Package/Case | Twin Tower |
