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MBR500200CTR
+BOMDIODE SCHOTTKY 200V 250A 2 TOWER
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ManufacturerGeneSiC Semiconductor
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Mfr. Part #MBR500200CTR
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Datasheet MBR500200CTR DataSheet
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Package Twin Tower
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In Stock3032
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Specifications
| Attribute | Value |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Diode Configuration | 1 Pair Common Anode |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Average Rectified(Io)(per Diode) | 250A |
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 250 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 3 mA @ 200 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
