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MBRT40035R
+BOMDIODE MODULE 35V 200A 3TOWER
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ManufacturerGeneSiC Semiconductor
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Mfr. Part #MBRT40035R
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Datasheet MBRT40035R DataSheet
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Package Three Tower
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In Stock7172
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Specifications
| Attribute | Value |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Bulk |
| Part Status | Active |
| Diode Configuration | 1 Pair Common Anode |
| Diode Type | Schottky, Reverse Polarity |
| Voltage - DC Reverse (Vr) (Max) | 35 V |
| Current - Average Rectified(Io)(per Diode) | 200A |
| Voltage - Forward (Vf) (Max) @ If | 750 mV @ 200 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 1 mA @ 20 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
