MJ11032G

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MJ11032G

+BOM

TRANS NPN DARL 120V 50A TO204

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Specifications

Attribute Value
Supplier onsemi
Package / Case Tray
Part Status Active
Transistor Type NPN - Darlington
Current - Collector(Ic)(Max) 50 A
Voltage - Collector Emitter Breakdown(Max) 120 V
Vce Saturation(Max) @ Ib Ic 3.5V @ 500mA, 50A
Current - Collector Cutoff(Max) 2mA
DC Current Gain(h FE)(Min) @ Ic Vce 1000 @ 25A, 5V
Power - Max 300 W
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole

Overview

Description

The MJ11032G is a high-power NPN bipolar junction transistor (BJT) designed for various applications requiring high current and voltage handling capabilities. Manufactured by ON Semiconductor, it features a robust construction suitable for power switching and amplifier applications. Key specifications of the MJ11032G include a collector-emitter voltage (Vceo) of 250V, a collector current (Ic) of up to 50A, and a total power dissipation of 300W. It is housed in a TO-204AA package, which provides efficient heat dissipation due to its metal can design. The transistor is commonly used in industrial and commercial power supplies, motor control systems, and audio amplifiers. Its high gain and fast switching speed make it particularly effective in circuits where efficiency and reliability are crucial. The MJ11032G is also designed for durability and longevity, with a wide operating temperature range and excellent thermal stability, ensuring dependable performance in demanding environments.

Equivalent

The MJ11032G is a high-power NPN Darlington transistor. Equivalent products include:
1. TIP142 - A widely used NPN Darlington transistor with similar characteristics.
2. MJ10012 - Another NPN Darlington transistor for high power applications.
3. BDX66 - Offers comparable specifications for general-purpose amplification and switching.
Always check the datasheets of these components to ensure they meet your specific application requirements.

Features

The MJ11032G is a silicon NPN Darlington transistor designed for power switching applications. Here are its key features:
1. Type: NPN Darlington Transistor.
2. Collector-Emitter Voltage (Vceo): 250V maximum, providing high voltage handling capability.
3. Collector Current (Ic): Continuous current of up to 50A, suitable for high power applications.
4. Power Dissipation: Able to dissipate up to 300W, ensuring efficient thermal management.
5. Current Gain: High DC current gain (hFE) exceeds 1000, ensuring high amplification.
6. Package: TO-204AA (TO-3), a robust package for superior heat dissipation.
7. Applications: Ideal for use in audio amplifiers, relay drivers, and motor control circuits.
8. Complementary Pair: Often paired with the MJ11033G for complementary designs.
These features make it a versatile component in circuits requiring high power and efficiency.

Pinout

The MJ11032G is a silicon NPN power transistor designed for high-power applications. It is typically used in power amplifiers and switching applications. The transistor comes in a TO-204AA package, also known as TO-3, which is a metal can type of packaging.
The MJ11032G has two main pins along with the case itself being used as a terminal:
1. Pin 1 (Base): This pin is used to control the transistor's operation. By applying a suitable voltage to the base, you can control the current flow between the collector and emitter.
2. Pin 2 (Emitter): This is the output terminal through which current flows out of the transistor. It is connected to the load in a circuit.
3. Collector (Case): The metal case of the package acts as the collector terminal. It is connected to the power supply in a circuit.
The transistor is designed for high current and high voltage applications, with a maximum collector current of 50A and a maximum collector-emitter voltage of 120V.

Manufacturer

The MJ11032G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading semiconductor company that designs and manufactures a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices. These components are used in various applications, such as automotive, industrial, cloud power, and the Internet of Things (IoT).
The company focuses on energy-efficient innovations and solutions that help reduce global energy use while enabling innovation in advanced electronics. Onsemi operates globally and serves markets including automotive, industrial, communications, computing, and consumer electronics. They are recognized for their comprehensive portfolio of products and emphasis on sustainability and efficiency, supporting technologies that aid in the transition to more efficient energy solutions.

Application

The MJ11032G is a high-power NPN Darlington transistor commonly used in applications such as motor control, power switching, and amplification. It is suitable for use in industrial and automotive environments where high current and voltage capabilities are required. Specific applications include driving inductive loads like relays, solenoids, and motors, as well as in uninterruptible power supplies (UPS) and power inverters. Additionally, it can be used in high-power audio amplifiers and other circuits that require high-gain, high-current switching. Its robust design makes it ideal for environments where durable and reliable components are essential.

Package

The MJ11032G is a silicon NPN power transistor typically used in industrial and consumer applications. It is housed in a TO-204AA package, also known as TO-3. This package type is designed for high-power transistors, offering excellent heat dissipation properties, making it suitable for applications requiring high current and voltage handling.

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