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MMBT6428LT1G
+BOMTRANS NPN 50V 0.2A SOT23-3
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Manufactureronsemi
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Mfr. Part #MMBT6428LT1G
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In Stock7023
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Specifications
| Attribute | Value |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (h FE) (Min) @ Ic, Vce | 250 @ 100µA, 5V |
| Power - Max | 225 mW |
| Frequency - Transition | 700MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | MMBT6428 |
Overview
Description
The MMBT6428LT1G has a high current gain (hFE), which enhances its efficiency in switching applications. It is characterized by a low saturation voltage and fast switching speeds, making it ideal for applications such as signal amplification, low-frequency oscillators, and general-purpose switching.
This transistor is widely used in consumer electronics, automotive, and industrial applications. Its reliability and performance in various temperature ranges further contribute to its popularity among engineers and designers.
Equivalent
Features
1. Type: NPN transistor.
2. Package: Available in a small SOT-23 package, which is ideal for space-constrained designs.
3. Current Rating: Maximum collector current (Ic) is 600 mA, suitable for a variety of applications.
4. Voltage Rating: Collector-emitter voltage (Vce) is up to 45V, providing a robust operating range.
5. Gain: High current gain (hFE) typically ranges from 100 to 300, enhancing amplification capabilities.
6. Frequency: Transition frequency (fT) of around 250 MHz, making it suitable for high-frequency applications.
7. Thermal Characteristics: Low thermal resistance, ensuring efficient heat dissipation.
8. Applications: Commonly used in signal amplification, switching, and driver circuits in consumer electronics and industrial applications.
These features make the MMBT6428LT1G versatile for various electronic circuit designs.
Pinout
1. Pin 1 (B1): Base of Transistor Q1
2. Pin 2 (C1): Collector of Transistor Q1
3. Pin 3 (E1): Emitter of Transistor Q1
4. Pin 4 (B2): Base of Transistor Q2
5. Pin 5 (C2): Collector of Transistor Q2
6. Pin 6 (E2): Emitter of Transistor Q2
This transistor is commonly used in switching and amplification applications.
Manufacturer
Application
1. Switching Circuits: Acts as a switch in low-current applications.
2. Amplification: Used in audio and radio frequency amplification.
3. Signal Processing: Employed in small-signal applications for processing analog signals.
4. LED Drivers: Controls LED lighting in various consumer electronics.
5. Consumer Electronics: Found in devices like televisions, radios, and amplifiers for signal management.
Its compact size and efficient performance make it suitable for space-constrained environments.