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MMBTA13LT1G
+BOMTRANS NPN DARL 30V 0.3A SOT23-3
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Manufactureronsemi
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Mfr. Part #MMBTA13LT1G
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In Stock5382
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Specifications
| Attribute | Value |
| Part Status | Active |
| Base Product Number | MMBTA13 |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (h FE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Power - Max | 225 mW |
| Frequency - Transition | 125MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Overview
Description
MMBTA13LT1G is a type of transistor, specifically a low-voltage, high-speed NPN bipolar junction transistor (BJT). It is commonly used in various electronic applications, including switching and amplification, due to its fast switching capabilities and high current handling.
This transistor features a maximum collector current (Ic) of around 1A and a collector-emitter voltage (Vce) rating typically up to 30V. Its compact package design allows for easy integration into circuit boards, making it suitable for consumer electronics, automotive applications, and industrial devices.
When implementing the MMBTA13LT1G, proper biasing is crucial for optimal performance, ensuring the transistor operates within its specified parameters to prevent overheating or failure. It is widely available and often used in hobbyist projects and professional designs alike. Always consult the manufacturer's datasheet for detailed specifications and application guidelines.
This transistor features a maximum collector current (Ic) of around 1A and a collector-emitter voltage (Vce) rating typically up to 30V. Its compact package design allows for easy integration into circuit boards, making it suitable for consumer electronics, automotive applications, and industrial devices.
When implementing the MMBTA13LT1G, proper biasing is crucial for optimal performance, ensuring the transistor operates within its specified parameters to prevent overheating or failure. It is widely available and often used in hobbyist projects and professional designs alike. Always consult the manufacturer's datasheet for detailed specifications and application guidelines.
Equivalent
The MMBTA13LT1G is a NPN bipolar junction transistor (BJT) suitable for low-power applications. Equivalent products include the 2N3904, BC547, and MMBTA06. When selecting a substitute, consider parameters like voltage, current, and frequency characteristics to ensure compatibility. Always refer to the datasheets for specific specifications before making a substitution.
Features
The MMBTA13LT1G is a low-noise, low-voltage N-channel MOSFET designed for various applications, including amplifiers and switching in consumer electronics. Key features include:
1. Low Threshold Voltage: Ensures efficient operation at lower gate voltages.
2. High Speed: Provides fast switching capabilities, making it suitable for RF applications.
3. Low On-Resistance (R_DS(on)): Enhances efficiency by minimizing power dissipation during operation.
4. Small Package Size: Available in a compact SOT-23 package, ideal for space-constrained designs.
5. High Drain-Source Voltage (V_DS): Supports a wide range of voltage applications.
6. Improved Thermal Performance: Better heat dissipation for reliable performance.
These attributes make the MMBTA13LT1G suitable for power management, signal switching, and various electronic circuits, ensuring reliability and efficiency in its applications.
1. Low Threshold Voltage: Ensures efficient operation at lower gate voltages.
2. High Speed: Provides fast switching capabilities, making it suitable for RF applications.
3. Low On-Resistance (R_DS(on)): Enhances efficiency by minimizing power dissipation during operation.
4. Small Package Size: Available in a compact SOT-23 package, ideal for space-constrained designs.
5. High Drain-Source Voltage (V_DS): Supports a wide range of voltage applications.
6. Improved Thermal Performance: Better heat dissipation for reliable performance.
These attributes make the MMBTA13LT1G suitable for power management, signal switching, and various electronic circuits, ensuring reliability and efficiency in its applications.
Pinout
The MMBTA13LT1G is a NPN bipolar junction transistor (BJT) housed in a surface-mount package (SOT-23). It features a total of three pins.
The pin configuration and functions are as follows:
1. Pin 1 (Emitter): This is the emitter terminal where the current flows out of the transistor.
2. Pin 2 (Base): This is the control terminal to which a small input current is applied to control the larger current flowing from the collector to the emitter.
3. Pin 3 (Collector): This is the terminal where the current flows into the transistor.
The MMBTA13LT1G is commonly used in switching and amplification applications in various electronic circuits.
The pin configuration and functions are as follows:
1. Pin 1 (Emitter): This is the emitter terminal where the current flows out of the transistor.
2. Pin 2 (Base): This is the control terminal to which a small input current is applied to control the larger current flowing from the collector to the emitter.
3. Pin 3 (Collector): This is the terminal where the current flows into the transistor.
The MMBTA13LT1G is commonly used in switching and amplification applications in various electronic circuits.
Manufacturer
The MMBTA13LT1G is manufactured by ON Semiconductor Corporation. ON Semiconductor is a global semiconductor company that designs and manufactures a wide range of electronic components, including analog, logic, and discrete devices. The company serves various industries, including automotive, industrial, communications, and consumer electronics.
ON Semiconductor focuses on providing high-performance and energy-efficient solutions, and it is known for its commitment to innovation and sustainability. The company's products are used in numerous applications, such as power management, signal processing, and sensing technologies. With a strong emphasis on research and development, ON Semiconductor aims to enable advancements in technology and support the growing demand for smart and connected devices.
ON Semiconductor focuses on providing high-performance and energy-efficient solutions, and it is known for its commitment to innovation and sustainability. The company's products are used in numerous applications, such as power management, signal processing, and sensing technologies. With a strong emphasis on research and development, ON Semiconductor aims to enable advancements in technology and support the growing demand for smart and connected devices.
Application
The MMBTA13LT1G is a N-channel MOSFET commonly used in various applications, including:
1. Switching Power Supplies: Efficiently control power in converters.
2. Motor Drivers: Drive DC motors and other inductive loads.
3. LED Drivers: Control LED lighting systems.
4. Load Switching: Turn on/off resistive or capacitive loads.
5. Signal Amplification: Amplify small signals in analog applications.
6. Audio Amplifiers: Used in audio power amplifiers for improved efficiency.
7. Battery Management Systems: Manage charging and discharging processes.
Its low on-resistance and fast switching capabilities enhance performance in these applications.
1. Switching Power Supplies: Efficiently control power in converters.
2. Motor Drivers: Drive DC motors and other inductive loads.
3. LED Drivers: Control LED lighting systems.
4. Load Switching: Turn on/off resistive or capacitive loads.
5. Signal Amplification: Amplify small signals in analog applications.
6. Audio Amplifiers: Used in audio power amplifiers for improved efficiency.
7. Battery Management Systems: Manage charging and discharging processes.
Its low on-resistance and fast switching capabilities enhance performance in these applications.
Package
The MMBTA13LT1G is packaged in a Surface Mount Device (SMD) format, specifically in a SOT-23 package. This compact package type is designed for efficient thermal performance and space-saving on printed circuit boards.
