MR2A16ACYS35

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MR2A16ACYS35

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IC RAM 4MBIT PARALLEL 44TSOP2

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Specifications

Attribute Value
Package Tray
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat RAM
Technology MRAM (Magnetoresistive RAM)
MemorySize 4Mb (256K x 16)
MemoryInterface Parallel
WriteCycleTime-WordPage 35ns
AccessTime 35 ns
Voltage-Supply 3V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 44-TSOP (0.400, 10.16mm Width)

Overview

Description

The MR2A16ACYS35 is a specific model of Magnetoresistive Random Access Memory (MRAM) chip. MRAM is a type of non-volatile memory technology that uses magnetic states to store data, unlike traditional RAM, which relies on electric charges. The "MR2A16ACYS35" indicates the specific configuration and capabilities of this MRAM chip, including its storage capacity, interface specifications, and speed performance.
Key features of MRAM, including the MR2A16ACYS35, are high endurance, fast read/write speeds, and the ability to retain data without power. These characteristics make MRAM an attractive option for applications requiring quick data access and reliability, such as in industrial, automotive, and telecommunications sectors. MRAM also offers the advantage of combining the benefits of both volatile memory (like DRAM and SRAM) and non-volatile memory (like Flash), potentially replacing these technologies in future applications.
The MR2A16ACYS35 is an example of how MRAM technology is evolving, providing more efficient and reliable solutions for memory storage challenges in various technological fields.

Equivalent

The MR2A16ACYS35 is a 4Mb non-volatile magnetoresistive random-access memory (MRAM) chip. Equivalent products include other MRAM chips with similar specifications, such as the Everspin MR2A16A series, NXP's MRAM offerings like the MR2A16AMYS35, or Avalanche Technology's P-SRAM offerings with similar capacities. It's important to verify compatibility based on pin configuration, speed, and voltage requirements before substitution.

Features

The MR2A16ACYS35 is a 4Mbit magnetoresistive random-access memory (MRAM) chip designed by Everspin Technologies. It features a 256K x 16-bit organization and offers non-volatile storage, meaning it retains data without power. The MRAM technology provides high-speed read and write capabilities, similar to SRAM, with access times typically around 35 nanoseconds.
Key features include:
- Non-volatility: Retains data without power.
- Fast access time: Approximately 35 ns.
- High endurance: Virtually unlimited read/write cycles.
- Data retention: Typically over 20 years.
- Standard SRAM-compatible interface: Easy integration into existing systems.
- Wide operating temperature range: Supports industrial (-40°C to +85°C) environments.
- Low power consumption: Efficient during both active operation and standby.
- Parallel interface: Facilitates fast data transfer.
This MRAM is suitable for applications requiring high-speed performance and reliability, such as industrial systems, data logging, and aerospace applications.

Manufacturer

The MR2A16ACYS35 is manufactured by Everspin Technologies, Inc. Everspin is a company that specializes in developing and manufacturing Magnetoresistive Random Access Memory (MRAM) products. Founded in 2008 as a spin-off from Freescale Semiconductor, Everspin is based in Chandler, Arizona. The company is known for its expertise in MRAM technology, which combines the speed of SRAM, the capacity of DRAM, and the non-volatility of Flash memory. This technology is used in various applications, including industrial, automotive, and enterprise storage solutions, due to its fast read/write capabilities and endurance. Everspin aims to provide reliable and high-performance memory solutions that cater to the evolving needs of modern electronic devices.

Application

The MR2A16ACYS35 is a magnetoresistive random-access memory (MRAM) chip. Its application areas include:
1. Automotive Systems: Used in critical data storage for systems requiring non-volatility and high-speed performance.
2. Industrial Automation: Ideal for applications needing reliable memory in harsh environments.
3. Aerospace and Defense: Suitable for systems needing radiation-resistant memory.
4. Embedded Systems: Used in microcontrollers and processors for fast memory access.
5. Data Storage and Networking: Enhances performance in RAID systems and network infrastructure.
6. Medical Devices: Applied in systems where data retention and speed are crucial.
These applications leverage MRAM's advantages of non-volatility, speed, and endurance.

Package

The MR2A16ACYS35 is a 4Mb Magnetoresistive Random Access Memory (MRAM) chip, and it comes in a 48-ball Fine-pitch Ball Grid Array (FBGA) package. This package type is compact and suitable for surface mounting, commonly used in applications where space is a constraint.

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