MRF166C

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MRF166C

+BOM

RF MOSFET 28V 319-07

  • ManufacturerMACOM Technology Solutions

  • Mfr. Part #MRF166C

  • Datasheet MRF166C DataSheet

  • In Stock3381

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Specifications

Attribute Value
Part Status Active
Base Product Number MRF166
Technology MOSFET (Metal Oxide)
Configuration N-Channel
Frequency 30MHz ~ 500MHz
Gain 16dB
Voltage - Test 28 V
Current Rating (Amps) 4A
Current - Test 25 mA
Power - Output 20W
Voltage - Rated 65 V
Package / Case 319-07
Supplier Device Package 319-07, Style 3
Packaging Tray

Overview

Description

The MRF166C is a high-frequency transistor primarily used in RF (Radio Frequency) applications. It is designed for medium-power amplification and is widely utilized in communication equipment. The MRF166C operates in the VHF and UHF bands and is known for its high efficiency and gain. It features a silicon NPN bipolar design, which contributes to its robustness and reliability in demanding environments.
Key specifications typically include a collector-emitter voltage that can handle significant power levels, making it suitable for applications like TV transmitters, RF amplifiers, and industrial RF heating. Its package is often designed to be easy to integrate into existing systems, ensuring compatibility with various RF circuit designs.
The MRF166C is valued for its performance stability across temperature variations, contributing to its popularity in both commercial and industrial sectors. Its ability to deliver consistent performance makes it a critical component in ensuring reliable signal transmission and amplification in RF systems.

Equivalent

The MRF166C is a high-frequency N-channel MOSFET commonly used for RF amplification. Equivalent products include:
1. BLF278 - by Ampleon
2. SD2931 - by STMicroelectronics
3. SRFJ7043 - by Sirenza Microdevices
4. ARF446 - by Microsemi
These equivalents may vary in specifications like power output and frequency range, so it’s important to verify compatibility with your specific application.

Features

The MRF166C is an RF power transistor designed for use in high-frequency applications. Key features include:
1. Frequency Range: Suitable for operations up to 175 MHz, making it ideal for VHF applications.
2. Power Output: Can deliver up to 150 watts of output power, ensuring strong signal transmission.
3. Efficiency: High efficiency, typically around 60% or more, which helps in reducing power loss and heat generation.
4. Gain: Provides a power gain of around 10 dB, contributing to effective amplification.
5. Package Type: Comes in a hermetically sealed package for enhanced reliability and protection against environmental factors.
6. Impedance Matching: Designed with internal matching components to ease circuit design and ensure optimal performance.
7. Thermal Management: Features an all-gold metallization system for improved thermal stability and durability.
8. Application: Commonly used in industrial, scientific, and medical applications as well as broadcasting and communication systems.
These characteristics make the MRF166C a robust choice for high-frequency power amplification needs.

Pinout

The MRF166C is an RF power transistor commonly used in high-frequency applications. It is designed for VHF and UHF communications and broadcasting. The MRF166C typically comes in a flange-mount package with a total of 4 pins. Here’s a brief overview of its pin functions:
1. Collector (Drain): This is the terminal through which the main current flows into the transistor, often connected to the power supply in amplifier configurations.

2. Emitter (Source): This terminal provides the path through which the current leaves the transistor, usually connected to the ground or the output in amplifier configurations.
3. Base (Gate): The base terminal is used for controlling the operation of the transistor. A small current or voltage applied here modulates the larger current flowing from the collector to the emitter.
4. Case (Flange): Often used as a heat sink connection, this pin may also be connected to the emitter, depending on the specific design and application.
These transistors are vital components in RF amplification, providing the necessary gain and power handling capabilities for communication devices.

Manufacturer

The MRF166C is manufactured by NXP Semiconductors. NXP Semiconductors is a global semiconductor company that provides a wide range of products and solutions, including integrated circuits, microcontrollers, and RF power transistors, such as the MRF166C. The company focuses on various sectors, including automotive, communication infrastructure, consumer electronics, and industrial technology. NXP is known for its innovation in secure connectivity solutions for embedded applications and holds a significant presence in the semiconductor industry.

Application

The MRF166C is a power transistor designed primarily for RF (radio frequency) applications. It is commonly used in VHF (Very High Frequency) and UHF (Ultra High Frequency) communication systems. Key application areas include:
1. Broadcast Transmitters: Enhancing signal transmission in TV and FM radio broadcasting.
2. RF Amplifiers: Serving as a crucial component in amplifying RF signals for various communication devices.
3. Military and Aerospace: Used in secure and reliable communication systems.
4. Industrial RF Heating: Employed in applications like drying and sealing.
5. Telecommunications: Supporting cellular base stations and repeaters.
Its high power and efficiency make it suitable for demanding RF performance environments.

Package

The MRF166C is a high-frequency N-channel MOSFET transistor. Its package type is typically a TO-59, which is a metal can package designed for RF applications. This type of package provides efficient heat dissipation and is commonly used for high-power and high-frequency transistors.

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