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MRF174
+BOMFET RF 65V 150MHZ 211-11
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ManufacturerMACOM Technology Solutions
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Mfr. Part #MRF174
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Datasheet MRF174 DataSheet
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Package 211-11-2
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In Stock11950
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Specifications
| Attribute | Value |
| Supplier | MACOM Technology Solutions |
| Package / Case | Tray |
| Part Status | Active |
| Transistor Type | N-Channel |
| Frequency | 150MHz |
| Gain | 11.8dB |
| Voltage - Test | 28 V |
| Current Rating (Amps) | 13A |
| Noise Figure | 3dB |
| Current - Test | 2 A |
| Power - Output | 125W |
| Voltage - Rated | 65 V |
Overview
Description
Typically, this transistor operates in the frequency range of 12.5 to 175 MHz and can provide output power up to 150 watts. It features a silicon NPN bipolar design, which allows for robust performance in demanding environments. The MRF174 is often chosen for its excellent thermal stability, making it suitable for continuous operation in RF amplifiers and other related applications.
This component is encapsulated in a TO-220 package, which provides effective heat dissipation, essential for maintaining performance and longevity. Due to its specific design and capabilities, the MRF174 is a staple in RF power amplification, offering a reliable solution for a variety of high-frequency electronic needs.
Equivalent
1. NXP BLF244
2. Ampleon BLF184
3. STMicroelectronics SD2931
4. Motorola MRFE6VP61K25H
These components offer similar functionality and can be used in RF power amplification applications. Always check the datasheets for compatibility in terms of electrical parameters and packaging.
Features
1. Frequency Range: Suitable for operation up to 400 MHz, making it ideal for VHF and UHF applications.
2. Power Output: Delivers significant power, typically around 70 watts, which is suitable for telecommunications and broadcasting applications.
3. Efficiency: Known for high efficiency, which minimizes power loss and heat generation, thus improving reliability and performance.
4. Gain: Offers a high power gain, typically around 12 dB, which enhances the amplification of weak signals.
5. Impedance Matching: Features design elements that facilitate easier impedance matching in RF circuits, simplifying circuit design.
6. Ruggedness: Built to withstand mismatches under load conditions, it is robust and reliable for demanding environments.
7. Package: Typically housed in a durable, flange-mounted package that aids in heat dissipation and mechanical stability.
These features make the MRF174 a popular choice in RF amplifier designs for both commercial and amateur radio applications.
Pinout
1. Emitter (E): This pin is typically connected to the ground in common emitter amplifier configurations. It plays a role in stabilizing the transistor and is important for biasing.
2. Collector (C): This is the main output pin from which the amplified RF signal is extracted. It is connected to the DC power supply while also interfacing with the output load.
3. Base (B): This pin is used to control the transistor. A small current or voltage applied to this pin modulates the larger current flowing between the collector and emitter, achieving amplification.
4. Emitter (E): Often, two pins are designated as emitters for enhanced power handling and thermal conduction, which is common in high-power RF transistors.
These pins allow the MRF174 to function efficiently in RF amplification scenarios, such as in radio transmitters or other communication devices that require high-frequency operations.
Manufacturer
Application
1. RF Amplifiers: Used in broadcast, VHF, and UHF bands due to its high power and efficiency.
2. Telecommunications: Ideal for use in base station transmitters.
3. Industrial RF Heating: Suitable for industrial equipment requiring RF power.
4. Aerospace and Defense: Utilized in communication systems and radar applications.
5. Medical Equipment: Employed in medical imaging and RF therapy devices.
Its robust design allows it to handle high power levels, making it versatile for various RF and microwave applications.