MRFX1K80HR5

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MRFX1K80HR5

+BOM

RF MOSFET LDMOS 65V NI-1230H-4S

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Specifications

Attribute Value
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Transistor Type LDMOS (Dual)
Frequency 1.8MHz ~ 470MHz
Gain 24dB
Voltage - Test 65 V
Current Rating (Amps) 10µA
Current - Test 200 mA
Power - Output 1800W
Voltage - Rated 182 V

Overview

Description

The MRFX1K80HR5 is a high-power RF LDMOS transistor from NXP Semiconductors, designed for industrial, scientific, and medical (ISM) applications, as well as broadcast and aerospace systems.
### Key Features:
- Frequency Range: 1.8–600 MHz
- Output Power: 1800W (pulsed)
- High Efficiency: Up to 70%
- Drain-Source Voltage (VDS): 50V
- Robustness: High thermal stability and ruggedness
### Applications:
- RF plasma generators
- AM/FM broadcast transmitters
- Magnetic resonance imaging (MRI)
- RF heating
### Advantages:
- High power density
- Excellent linearity
- Reliable performance under harsh conditions
The MRFX1K80HR5 is ideal for demanding RF amplification where efficiency and durability are critical. For detailed specs, refer to NXP’s datasheet.

Equivalent

The MRFX1K80HR5 is a high-power RF LDMOS transistor by NXP. Equivalent alternatives include:
- Freescale MRFE6VP61K25H (similar power range)
- Ampleon BLF188XR (comparable specs)
- STMicroelectronics PD57070-E (for high-power RF)
- Wolfspeed CGH27015F (GaN alternative for higher efficiency)
Check datasheets for exact compatibility in your application.

Features

The MRFX1K80HR5 is a high-power RF LDMOS transistor by NXP, designed for industrial, scientific, and medical (ISM) applications. Key features:
- Frequency Range: 1.8–500 MHz
- Output Power: 1800 W (pulsed)
- High Efficiency: Up to 70%
- Drain-Source Voltage (VDS): 50 V
- Gain: 22 dB typical
- Rugged Design: High reliability with integrated ESD protection
- Package: High-power plastic (HVH-2627F-4L)
- Applications: RF plasma, MRI, broadcast, and RF energy
Compact, efficient, and robust, it suits demanding high-power RF systems.

Pinout

The MRFX1K80HR5 is an RF LDMOS transistor from NXP, designed for high-power RF applications.
- Pin Count: 4 (Flange-mounted package with source, gate, drain, and thermal pad connections).
- Key Functions:
- Gate (G): Input for RF signal and biasing.
- Drain (D): Output for amplified RF signal.
- Source (S): Ground reference (connected to flange).
- Flange/Thermal Pad: Provides grounding and heat dissipation.
It operates in 1.8–600 MHz ranges, delivering 1800W peak power (typical for pulsed applications like radar, broadcast, and industrial RF). Requires proper heat sinking due to high power dissipation.

Manufacturer

The MRFX1K80HR5 is manufactured by NXP Semiconductors, a leading global semiconductor company known for its high-performance RF power transistors. NXP specializes in automotive, industrial, IoT, and communication infrastructure solutions, with a strong focus on innovation and efficiency. The MRFX1K80HR5 is a high-power LDMOS transistor designed for RF applications like broadcast, industrial, and aerospace.
NXP, headquartered in the Netherlands, is recognized for its expertise in RF power technology and reliable semiconductor solutions.

Package

The MRFX1K80HR5 is an RF power transistor from NXP Semiconductors, packaged in a HVSSOP-4 (High-Voltage Small Outline Package with 4 leads). This surface-mount package is designed for high-power RF applications, offering efficient thermal performance and compact size. It is commonly used in industrial, scientific, and medical (ISM) applications, as well as broadcast and RF energy systems.

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