MSC025SMA120B4

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MSC025SMA120B4

+BOM

TRANS SJT N-CH 1200V 103A TO247

  • ManufacturerMicrochip Technology

  • Mfr. Part #MSC025SMA120B4

  • In Stock88

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Specifications

Attribute Value
Supplier Microchip Technology
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain(Id) @ 25°C 103A (Tc)
Drive Voltage(Max Rds On Min Rds On) 20V
Rds On(Max) @ Id Vgs 31mOhm @ 40A, 20V
Vgs(th)(Max) @ Id 2.8V @ 3mA
Gate Charge(Qg)(Max) @ Vgs 232 nC @ 20 V
Vgs(Max) +23V, -10V
Input Capacitance(Ciss)(Max) @ Vds 3020 pF @ 1000 V
Power Dissipation (Max) 500W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4

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