Specifications
| Attribute | Value |
| Supplier | Micron Technology Inc. |
| Package | Bulk |
| ProductStatus | Obsolete |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NAND |
| MemorySize | 2Gb (128M x 16) |
| MemoryInterface | Parallel |
| Voltage-Supply | 1.7V ~ 1.95V |
| OperatingTemperature | 0°C ~ 70°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 63-VFBGA |
Overview
Description
MT29F2G16ABBEAHC:E is Micron’s MT29F2G16 family NAND flash device (2 Gbit = 256 MB). It is a parallel NAND with an 8-bit data bus, typically organized with 4 KB pages and a 128-byte spare area, and blocks made up of multiple pages. It is designed to be used with an external NAND controller and ECC, providing read/verify, program, and erase operations at page/block granularity. Endurance is in the thousands of program/erase cycles per block; wear leveling and bad-block management are required; data retention is years when not overwritten. The E suffix (and other letters) denote specific grade/temperature/packaging variants. This device is suitable for embedded storage and other flash-based storage applications. For exact specs—capacity per die, page/block sizes, voltage range, timings, ECC requirements, endurance, and temperature range—consult the official Micron MT29F2G16ABBEAHC:E datasheet.
Equivalent
There are no published direct cross-references for MT29F2G16ABBEAHC:E. It’s Micron’s 2-Gbit x16 NAND Flash with an ONFI-compatible interface (extended-temp grade E). To substitute, use another 2Gbit x16 ONFI NAND with identical page size, spare area, I/O voltage, and timing. For an exact cross-reference, use Micron’s cross-reference service or check distributors for devices from Samsung/Kioxia/Hynix with matching specs.
Features
MT29F2G16ABBEAHC:E is a Micron NAND flash memory device. Key features:
- Density and type: 2 Gbit Multi-Level Cell (MLC) NAND with a 16-bit data bus (x16)
- Interface: ONFI-compatible NAND interface
- Page/ spare: typical 2 KB page size with ~64 B OOB/spare per page
- Operations: supports page program, block erase, random/sequential read
- Voltage: Vcc in the 2.7–3.6 V range (I/O at similar levels)
- Temperature: extended temperature variant (-40°C to 85°C)
- Endurance/retention: roughly 10k–100k program/erase cycles; data retention around 10 years
- Reliability: built-in bad-block management; external ECC recommended
- Additional: wear leveling and standard NAND reliability features
Note: exact page size, block structure, and timing can vary by revision; consult the current datasheet for precise specs.
- Density and type: 2 Gbit Multi-Level Cell (MLC) NAND with a 16-bit data bus (x16)
- Interface: ONFI-compatible NAND interface
- Page/ spare: typical 2 KB page size with ~64 B OOB/spare per page
- Operations: supports page program, block erase, random/sequential read
- Voltage: Vcc in the 2.7–3.6 V range (I/O at similar levels)
- Temperature: extended temperature variant (-40°C to 85°C)
- Endurance/retention: roughly 10k–100k program/erase cycles; data retention around 10 years
- Reliability: built-in bad-block management; external ECC recommended
- Additional: wear leveling and standard NAND reliability features
Note: exact page size, block structure, and timing can vary by revision; consult the current datasheet for precise specs.
Pinout
- Pin count: 48 pins (48-pin package)
- Function: Micron MT29F2G16ABBEAHC:E is a NAND flash memory device (2 Gbit total) with a 16-bit I/O data bus (x16). It uses the standard NAND interface (CLE, ALE, WE#, RE#, CE#, WP#, R/B#, DQ[15:0], plus VCC/VCCQ/GND).
- Function: Micron MT29F2G16ABBEAHC:E is a NAND flash memory device (2 Gbit total) with a 16-bit I/O data bus (x16). It uses the standard NAND interface (CLE, ALE, WE#, RE#, CE#, WP#, R/B#, DQ[15:0], plus VCC/VCCQ/GND).
Manufacturer
Manufacturer: Micron Technology, Inc.
What kind of company: An American multinational that designs, develops, and manufactures memory and storage technologies, including DRAM and NAND flash memory, for electronics and data storage.
What kind of company: An American multinational that designs, develops, and manufactures memory and storage technologies, including DRAM and NAND flash memory, for electronics and data storage.
Application
MT29F2G16ABBEAHC:E is Micron NAND flash memory used for embedded non-volatile storage. Typical application areas include:
- Embedded systems and MCUs needing firmware/data storage
- Portable consumer electronics (digital cameras, camcorders, handheld devices)
- Automotive/industrial equipment (data logging, infotainment, telematics) with extended temperature range
- Small-scale SSD modules and OEM memory cards
- Boot/firmware storage in SoCs and consumer devices
Concise and hardware-typical usage for embedded NAND in various environments.
- Embedded systems and MCUs needing firmware/data storage
- Portable consumer electronics (digital cameras, camcorders, handheld devices)
- Automotive/industrial equipment (data logging, infotainment, telematics) with extended temperature range
- Small-scale SSD modules and OEM memory cards
- Boot/firmware storage in SoCs and consumer devices
Concise and hardware-typical usage for embedded NAND in various environments.
Package
FBGA (ball-grid array) package.
